Abstract
Near-bandgap photoluminescence at 300 K of a Se-dopedn-GaAs crystal withn=4.8·1016 cm−3 was measured at a transparent CrAu−GaAs Schottky contact. The dependence of the luminescence intensity on the applied reverse voltage was recorded. Both the doping concentration and absorption coefficients above bandgap are determined.
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Langmann, U. Photoluminescence ofn-GaAs at transparent Schottky contacts. Appl. Phys. 1, 219–221 (1973). https://doi.org/10.1007/BF00884672
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DOI: https://doi.org/10.1007/BF00884672