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Effects of sintering additives on the mixed transport properties of ceria-based materials under reducing conditions

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Abstract

Commercial Ce0.8Gd0.2O2−δ nanopowders and alternative precursors synthesized by a freeze-drying method were used to obtain samples with and without Co addition as a sintering agent. Two percent Co-doped samples were sintered at 1150 °C and 1500 °C and undoped samples were sintered at 1500 °C or 1600 °C to obtain samples with relative densities in the range 92–94%. The total conductivity and the relative roles of bulk and grain boundary conductivity were studied by impedance spectroscopy. These results demonstrated that additions of Co play a very significant effect on the grain boundary behaviour, which is spoiled when the sintering temperature is excessive. Significant differences in grain boundary behaviour were also found between samples prepared from different precursor powders. The electronic conductivity of these materials was evaluated by an ion-blocking method and revealed that samples containing Co additions as a sintering additive possess somewhat lower n-type conductivity under identical conditions of temperature and oxygen partial pressure. The differences tend to vanish when these Co-doped samples are fired at high temperatures (1500 °C).

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Abbreviations

CGO:

Ce0.8Gd0.2O1.9

FD:

freeze-dried

RH:

rhodia

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Acknowledgements

The authors acknowledge the financial support by the Spanish Research Program MCyT (MAT-2001-3334); by the Canary Islands Government (PI/2001/053); by FCT, Portugal, under contract POCTI/CTM/39381/2001; and by “Accion Integrada” HP01-82. We also thank M.E.C.D. for a F.P.U. grant (D.P.C) and “Convenio Cajacanarias-ULL” for another grant (D.M.L.).

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Correspondence to P. Núñez.

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Presented at the OSSEP Workshop “Ionic and Mixed Conductors: Methods and Processes”, Aveiro, Portugal, 10–12 April 2003

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Pérez-Coll, D., Núñez, P., Marrero-López, D. et al. Effects of sintering additives on the mixed transport properties of ceria-based materials under reducing conditions. J Solid State Electrochem 8, 644–649 (2004). https://doi.org/10.1007/s10008-004-0505-1

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  • DOI: https://doi.org/10.1007/s10008-004-0505-1

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