Abstract
In piezotronics, PN junctions usually possess both piezoelectricity and semiconductor properties. This allows them to be manipulated mechanically by external forces through the coupling between deformation and free carriers. For a conventional non-piezoelectric PN junction, however, the mechanical manipulation seems difficult to achieve. In this paper, we theoretically demonstrate that this problem may be addressed via structural design. A composite beam model consisting of a piezoelectric dielectric layer and two non-piezoelectric PN junction layers is proposed. Then its electromechanical response under three different types of shear loads is examined based on a one-dimensional phenomenological theory. Results show as expected that the electrical behaviors of the junction can be tuned mechanically when the external force is applied on the interface, which provides a new idea for the design of piezotronic devices. Further, the effects of the doping level, thickness ratio, and material combination are also investigated, providing a comprehensive understanding of the proposed composite model.
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References
Hickernell, F.S.: The piezoelectric semiconductor and acoustoelectronic device development in the sixties. IEEE Trans. Ultrason. Ferroelectr. Freq. Control 52(5), 737–745 (2005)
Gao, P.X., Song, J.H., Liu, J., Wang, Z.L.: Nanowire piezoelectric nanogenerators on plastic substrates as flexible power sources for nanodevices. Adv. Mater. 19(1), 67–72 (2007)
Choi, M.Y., Choi, D., Jin, M.J., Kim, I., Kim, S.H., Choi, J.Y., Lee, S.Y., Kim, J.M., Kim, S.W.: Mechanically powered transparent flexible charge-generating nanodevices with piezoelectric ZnO nanorods. Adv. Mater. 21(21), 2185–2189 (2009)
Romano, G., Mantini, G., di Carlo, A., D’Amico, A., Falconi, C., Wang, Z.L.: Piezoelectric potential in vertically aligned nanowires for high output nanogenerators. Nanotechnology 22(46), 465401 (2011)
Wang, Z.L.: Nanobelts, nanowires, and nanodiskettes of semiconducting oxides—from materials to nanodevices. Adv. Mater. 15(5), 432–436 (2003)
Wang, X., Zhou, J., Song, J., Liu, J., Xu, N., Wang, Z.L.: Piezoelectric field effect transistor and nanoforce sensor based on a single ZnO nanowire. Nano Lett. 6(12), 2768–2772 (2006)
Wang, Z.L.: Piezopotential gated nanowire devices: piezotronics and piezo-phototronics. Nano Today 5(6), 540–552 (2010)
Büyükköse, S., Hernandez-Minguez, A., Vratzov, B., Somaschini, C., Geelhaar, L., Riechert, H., Van Der Wiel, W., Santos, P.: High-frequency acoustic charge transport in GaAs nanowires. Nanotechnology 25(13), 135204 (2014)
Yu, J., Ippolito, S.J., Wlodarski, W., Strano, M., Kalantar-Zadeh, K.: Nanorod based Schottky contact gas sensors in reversed bias condition. Nanotechnology 21(26), 265502 (2010)
Wen, X.N., Wu, W.Z., Ding, Y., Wang, Z.L.: Piezotronic effect in flexible thin-film based devices. Adv. Mater. 25(24), 3371–3379 (2013)
Lee, K.Y., Kumar, B., Seo, J.S., Kim, K.H., Sohn, J.I., Cha, S.N., Choi, D., Wang, Z.L., Kim, S.W.: p-Type polymer-hybridized high-performance piezoelectric nanogenerators. Nano Lett. 12(4), 1959–1964 (2012)
Liu, Y., Zhang, Y., Yang, Q., Niu, S.M., Wang, Z.L.: Fundamental theories of piezotronics and piezo-phototronics. Nano Energy 14, 257–275 (2015)
Wang, Z.L., Wu, W.Z.: Piezotronics and piezo-phototronics: fundamentals and applications. Natl. Sci. Rev. 1(1), 62–90 (2014)
Wang, Z.L.: Piezotronics and piezo-phototronics. Springer, Berlin (2012)
Auld, B.A.: Acoustic fields and waves in solids. Pипoл Клaccик (1973)
Pierret, R.F., Neudeck, G.W.: Advanced semiconductor fundamentals. Addison-Wesley, Reading (1987)
Wauer, J., Suherman, S.: Thickness vibrations of a piezo-semiconducting plate layer. Int. J. Eng. Sci. 35(15), 1387–1404 (1997)
Li, P., Jin, F., Yang, J.S.: Effects of semiconduction on electromechanical energy conversion in piezoelectrics. Smart Mater. Struct. 24(2), 025021 (2015)
Gu, C.L., Jin, F.: Shear-horizontal surface waves in a half-space of piezoelectric semiconductors. Philos. Mag. Lett. 95(2), 92–100 (2015)
Hu, Y.T., Zeng, Y., Yang, J.S.: A mode III crack in a piezoelectric semiconductor of crystals with 6 mm symmetry. Int. J. Solids Struct. 44(11–12), 3928–3938 (2007)
Sladek, J., Sladek, V., Pan, E., Young, D.L.: Dynamic anti-plane crack analysis in functional graded piezoelectric semiconductor crystals. Cmes-Comput Model Eng Sci 99(4), 273–296 (2014)
Sladek, J., Sladek, V., Pan, E., Wunsche, M.: Fracture analysis in piezoelectric semiconductors under a thermal load. Eng. Fract. Mech. 126, 27–39 (2014)
Zhao, M.H., Pan, Y.B., Fan, C.Y., Xu, G.T.: Extended displacement discontinuity method for analysis of cracks in 2D piezoelectric semiconductors. Int. J. Solids Struct. 94–95, 50–59 (2016)
Fan, C.Y., Yan, Y., Xu, G.T., Zhao, M.H.: Piezoelectric-conductor iterative method for analysis of cracks in piezoelectric semiconductors via the finite element method. Eng. Fract. Mech. 165, 183–196 (2016)
Zhao, M.H., Li, Y., Yan, Y., Fan, C.Y.: Singularity analysis of planar cracks in three-dimensional piezoelectric semiconductors via extended displacement discontinuity boundary integral equation method. Eng. Anal. Bound. Elem. 67, 115–125 (2016)
Zhang, C.L., Wang, X.Y., Chen, W.Q., Yang, J.S.: Carrier distribution and electromechanical fields in a free piezoelectric semiconductor rod. J. Zhejiang Univ. Sci. A 17(1), 37–44 (2016)
Zhang, C.L., Wang, X.Y., Chen, W.Q., Yang, J.S.: Propagation of extensional waves in a piezoelectric semiconductor rod. AIP Adv. 6(4), 045301 (2016)
Zhang, C.L., Wang, X.Y., Chen, W.Q., Yang, J.S.: An analysis of the extension of a ZnO piezoelectric semiconductor nanofiber under an axial force. Smart Mater. Struct. 26(2), 025030 (2017)
Cheng, R.R., Zhang, C.L., Chen, W.Q., Yang, J.S.: Piezotronic effects in the extension of a composite fiber of piezoelectric dielectrics and nonpiezoelectric semiconductors. J. Appl. Phys. 124(6), 064506 (2018)
Zhang, C., Luo, Y., Cheng, R., Wang, X.: Electromechanical fields in piezoelectric semiconductor nanofibers under an axial force. MRS Advances 2(56), 3421–3426 (2017)
Gao, Y., Wang, Z.L.: Electrostatic potential in a bent piezoelectric nanowire. The fundamental theory of nanogenerator and nanopiezotronics. Nano Lett. 7(8), 2499–2505 (2007)
Luo, Y.X., Zhang, C.L., Chen, W.Q., Yang, J.S.: Piezopotential in a bended composite fiber made of a semiconductive core and of two piezoelectric layers with opposite polarities. Nano Energy 54, 341–348 (2018)
Fang, K., Qian, Z.H., Yang, J.S.: Piezopotential in a composite cantilever of piezoelectric dielectrics and nonpiezoelectric semiconductors produced by shear force through e(15). Mater. Res. Express 6(11), 115917 (2019)
Yang, G.Y., Yang, L., Du, J.K., Wang, J., Yang, J.S.: PN junctions with coupling to bending deformation in composite piezoelectric semiconductor fibers. Int. J. Mech. Sci. 173, 105421 (2020)
Luo, Y.X., Zhang, C.L., Chen, W.Q., Yang, J.S.: An analysis of PN junctions in piezoelectric semiconductors. J. Appl. Phys. 122(20), 204502 (2017)
Yang, G.Y., Du, J.K., Wang, J., Yang, J.S.: Electromechanical Fields in a Nonuniform Piezoelectric Semiconductor Rod. J. Mech. Mater. Struct. 13(1), 103–120 (2018)
Fang, K., Qian, Z., Yang, J.: Piezopotential in a composite cantilever of piezoelectric dielectrics and nonpiezoelectric semiconductors produced by shear force through e15. Mater. Res. Express 6(11), 115917 (2019)
Acknowledgements
This work was supported by the National Natural Science Foundation of China (12061131013, 11972276, 12172171, and 12211530064), the State Key Laboratory of Mechanics and Control of Mechanical Structures at NUAA (No. MCMS-I-0522G01), the Fundamental Research Funds for the Central Universities (NS2022011 and NE2020002), National Natural Science Foundation of Jiangsu Province (BK20211176), Local Science and Technology Development Fund Projects Guided by the Central Government (2021Szvup061), Jiangsu High-Level Innovative and Entrepreneurial Talents Introduction Plan (Shuangchuang Doctor Program, JSSCBS20210166), and a project funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD).
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Appendix
Appendix
In Fig.
12, it can be seen that the difference between the linearization theory derived in this paper and the nonlinear solution of COMSOL is relatively small, which can verify the correctness of the theory in this paper.
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Liu, D., Fang, K., Li, P. et al. Electromechanical field analysis of PN junctions in bent composite piezoelectric semiconductor beams under shear forces. Acta Mech 235, 1067–1082 (2024). https://doi.org/10.1007/s00707-023-03790-1
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DOI: https://doi.org/10.1007/s00707-023-03790-1