Abstract
Epitaxial (epi) stacking faults on silicon wafers with <100>- and <111>-orientation were induced by intentional contamination with substances relevant for wafer manufacturing. The resulting defects were investigated by combining optical microscopy, atomic force microscopy and scanning electron microscope Auger electron spectroscopy. The latter was used to investigate the stacking faults both at the outside and in the interior by sputtering with argon ions. The results demonstrate that the type of an epi defect depends on the chemical composition and the physical phase of the contamination.
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Patsch, B., Ehlert, A., Kirchner, R. et al. Microscale investigation of surface contaminations during silicon epitaxial growth. Microchim Acta 164, 439–444 (2009). https://doi.org/10.1007/s00604-008-0080-8
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DOI: https://doi.org/10.1007/s00604-008-0080-8