Abstract
With the new arena of smart and Internet of things (IoT) enabled devices, a terahertz frequency-based network like 6G with high speed and low latency is required. Solid-state devices show good response till 5 GHz. However, at higher frequencies, the electromagnetic responses of these devices start to degrade. On the other hand, RF MEMS technology is matured, and devices until 30 GHz have been demonstrated. The present paper shows the advancement of RF MEMS to a new terahertz MEMS switch for 6G communication applications. The terahertz switch has an actuation voltage of 20 V with a mechanical frequency of 138.9 kHz. MEMS terahertz switch’s most important factor is its high-frequency linearity. A single switch can handle all the communication bands like 2G, 3G, 4G, 5G and 6G to 150 GHz frequency. Insertion loss is less than − 0.18 dB, and isolation is more than − 20 dB from DC to 150 GHz frequency. The return loss of the switch is also better than − 23 dB for the same band.
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Data availability
The data is available from the corresponding author [Deepak] upon reasonable request.
References
Al Farisi MS, Tsukamoto T, Tanaka S (2020) Tailoring material properties of electrochemically deposited Al film from chloroaluminate ionic liquid for microsystem technology using pulsed deposition. Sensors Actuators A: Phys 316:112384
Angira M, Bansal D, Kumar P, Mehta K, Rangra K (2019) A novel capacitive RF-MEMS switch for multi-frequency operation. Superlattices Microstruct. https://doi.org/10.1016/j.spmi.2019.106204
Anuroop et al (2019a) Compact high isolation and improved bandwidth hybrid RF MEMS SPDT switch for 5G applications. Microsyst Technol 25(8):3129–3136. doi: https://doi.org/10.1007/s00542-019-04343-0
Anuroop D, Bansal, Khushbu P, Kumar A, Kumar, Rangra K (2019b) Contact area design of ohmic RF MEMS switch for enhanced power handling. In: Proceedings of the International Conference on Sensing Technology, ICST, vol. 2018. https://doi.org/10.1109/ICSensT.2018.8603623
Baek CW, Kim Y-K, Ahn Y, Kim YH (2005) Measurement of the mechanical properties of electroplated gold thin films using micromachined beam structures. Sens Actuators A 117:17–27
Bahreyni B (2008) Fabrication and design of resonant microdevices. William Andrew, Norwich, NY
Bansal D, Kumar A, Sharma A, Rangra KJ (2015a) Design of compact and wide bandwidth SPDT with anti-stiction torsional RF MEMS series capacitive switch. Microsyst Technol 21(5):1047–1052. https://doi.org/10.1007/s00542-014-2238-0
Bansal D, Bajpai A, Kumar P, Kaur M, Kumar A, Rangra K (2015b) Design and fabrication of a reduced stiction radio frequency MEMS switch. J MicroNanolithogr, MEMS and MOEMS 14(3):035002
Bansal D, Bajpai A, Mehta K, Kumar P, Kumar A (2019) Improved design of ohmic RF MEMS switch for reduced fabrication steps. IEEE Trans Electron Devices 66(10):4361–4366. https://doi.org/10.1109/TED.2019.2932846
Bansal D, Bajpai A, Kumar P, Kaur M, Kumar A (2020) Effect of stress on pull-in voltage of RF MEMS SPDT switch. IEEE Trans Electron Devices 67(5):2147–2152. doi: https://doi.org/10.1109/ted.2020.2982667
Bansal D, Kumar P, Kumar A (2021) Improvement of RF MEMS devices by spring constant scaling laws. J Comput Electron. doi: https://doi.org/10.1007/s10825-021-01657-z
Deepankar Deshmukh M, Angira, (2019) Investigation on switching structure material selection for RF-MEMS shunt capacitive switches using Ashby, TOPSIS and VIKOR. Trans Electr Electron Mater 20(3):181–188
Kaynak M et al (2009) BEOL embedded RF-MEMS switch for mm-wave applications. Tech Dig - Int Electron Devices Meet IEDM, p 797–800. https://doi.org/10.1109/IEDM.2009.5424219
Kurmendra Kumar R (2021) Materials selection approaches and fabrication methods in RF MEMS switches. J Electron Mater 50(6):3149–3168
Lee YS, Jang YH, Kim JM, Kim YK (2010) A 50–110 GHz ohmic contact RF MEMS silicon switch with high isolation. Proc IEEE Int Conf Micro Electro Mech Syst, p 759–762. https://doi.org/10.1109/MEMSYS.2010.5442295
Mulloni V, Colpo S, Faes A, Margesin B (2013) A simple analytical method for residual stress measurement on suspended MEM structures using surface profilometry. J Micromech Microeng 23(2):025025
Rebeiz GM (2003) RF MEMS: Theory, Design, and Technology. Wiley, Hoboken, NJ, USA
Sharma A et al (2014) Fabrication process and reliability of metallic surface micromachined structures for RF MEMS devices, Ph.D. Thesis
Sim SM et al (2016) A 50–100 GHz ohmic contact SPDT RF MEMS silicon switch with dual axis movement. Microelectron Eng 162:69–74. doi: https://doi.org/10.1016/j.mee.2016.05.008
Ul-Haid H, Dafalla A, Quddus H, Al-Hadhrami (2011) Microstructure and surface mechanical properties of pulse electrodeposited nickel. Appl Surf Sci 257:9251–9259
WTD Commission (2019) Federal Communications Commission before the Federal Communications Commission Washington. https://mmwavecoalition.org/docket-18-21/fcc-docket-18-21-spectrum-horizons/. Accessed 17 May 2022
Acknowledgements
The authors would like to thank CSIR, India, and SERB-DST, India, for providing financial support.
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Central Electronics Engineering Research Institute, SERB-DST India, GAP-6519, Deepak Bansal.
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Bansal, D., Kaur, M., Kumar, P. et al. Design of a wide bandwidth terahertz MEMS Ohmic switch for 6G communication applications. Microsyst Technol 29, 271–277 (2023). https://doi.org/10.1007/s00542-023-05419-8
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DOI: https://doi.org/10.1007/s00542-023-05419-8