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RF, linearity and intermodulation distortion analysis with small-signal parameters extraction of tunable bandgap arsenide/antimonide tunneling interfaced JLTFET

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Abstract

This paper presents a charge plasma junctionless tunnel field effect transistor (JLTFET) based on a novel blend of an arsenide/antimonide tunable bandgap source to channel (S/C) tunneling interface by incorporating binary/ternary compound semiconducting materials (InAs/AlGaSb) in the source and channel regions to investigate the radio frequency (RF), linearity and intermodulation distortion performance. The proposed hetero-material JLTFET (H-JLTFET) is compared with a conventional homo-material (silicon) based JLTFET to explore the possible scope of HJLTFET for RFIC and wireless applications. The simulation study reveals that the HJLTFET achieves an improved performance in consideration of RF, Linearity and intermodulation distortion FOMs as parasitic capacitance (Cgg, 60.7% ↓), maximum oscillation frequency (fmax, 2292% ↑), gain bandwidth product (225 times ↑), Intrinsic gain (Av, 708% ↑), peak transconductance (gm, 79 times ↑), and various signal performance metrics such as VIP2 (97.9% ↑), VIP3 (326% ↑), IIP3 (237.9% ↑), and 1-dB compression point (11.6% ↑) in comparison to JLTFET. Moreover, HJLTFET shows better reliability in terms of power gains and small signal admittance (Y) parameters variation with high frequency as compared to JLTFET. Therefore, HJLTFET appears to be an efficient alternative for high frequency and low power operations required in future RFIC designs and wireless communication systems.

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Authors and Affiliations

  1. Department of Applied Physics, Delhi Technological University, Delhi, India

    Samriti Sharma & Rishu Chaujar

Authors
  1. Samriti Sharma
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  2. Rishu Chaujar
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Data collection, material preparation, and analysis were performed by both the authors. However, Samriti Sharma wrote the first draft of this manuscript. All the authors have read and approved the manuscript.

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Correspondence to Rishu Chaujar.

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Sharma, S., Chaujar, R. RF, linearity and intermodulation distortion analysis with small-signal parameters extraction of tunable bandgap arsenide/antimonide tunneling interfaced JLTFET. Microsyst Technol 28, 2659–2667 (2022). https://doi.org/10.1007/s00542-022-05273-0

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