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Simulation and comparative study on analog/RF and linearity performance of III–V semiconductor-based staggered heterojunction and InAs nanowire(nw) Tunnel FET

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Abstract

This paper presents the comparative study on linearity and analog/radio frequency presentation of an III–V staggered hetero-junction nanowire (NW) TFET with Si and InAs based NW TFET of same dimension. The device parameter of analog/RF performance for low power application such as transconductance (gm), output resistance (RO), intrinsic gain (gmR0), cut-off frequency (fT), maximum frequency of oscillation (fmax), gain bandwidth product (GBW), VIP2, VIP3 as well as 1-dB compression point has been explored. There is a better improvement in analog/radio frequency presentation obtained from heterojunction NW TFET over Si and InAs TFET. The result reveals that heterojunction TFET provides superior intrinsic gain, higher cutoff frequency, higher GBW better linearity performance as compared to Si and InAs TFET.

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Authors and Affiliations

  1. Silicon Institute of Technology, Bhubaneswar, Odisha, India

    Sudhansu Mohan Biswal & Biswajit Baral

  2. MAKAUT, Kolkata, West Bengal, India

    Debashis De & A. Sarkar

Authors
  1. Sudhansu Mohan Biswal
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  2. Biswajit Baral
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  3. Debashis De
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  4. A. Sarkar
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Correspondence to Sudhansu Mohan Biswal.

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Biswal, S.M., Baral, B., De, D. et al. Simulation and comparative study on analog/RF and linearity performance of III–V semiconductor-based staggered heterojunction and InAs nanowire(nw) Tunnel FET. Microsyst Technol 25, 1855–1861 (2019). https://doi.org/10.1007/s00542-017-3642-z

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  • DOI: https://doi.org/10.1007/s00542-017-3642-z

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