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Origin of the TTV of thin films obtained by temporary bonding ZoneBond® technology

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Abstract

This paper deals with the improvement of the TTV values (Total Thickness Variation) of 300 mm silicon wafers thinned down at 100 μm using the ZoneBond® (ZoneBond® is registred by Brewer Science Inc.) technology. We have demonstrated that the thin film TTV of the film was mainly driven by the bonding process and was very tolerant towards the coating step. It was also shown that, within the experiment precision, the TTV value was not changed by the grinding thinning process. 8 µm was the best TTV value obtained after the optimization of the bonding parameters.

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Notes

  1. Microprof ® is registred by FRT.

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Authors and Affiliations

  1. CEA, LETI, Minatec, 17 rue des Martyrs, 38000, Grenoble, France

    P. Montméat, T. Enot, M. Pellat, F. Fournel, L. Bally, L. Baud, J. Dechamp, R. Eleouet, L. Vignoud & M. Zussy

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  1. P. Montméat
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  2. T. Enot
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  3. M. Pellat
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  4. F. Fournel
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  5. L. Bally
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  6. L. Baud
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  7. J. Dechamp
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  8. R. Eleouet
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  9. L. Vignoud
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  10. M. Zussy
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Correspondence to P. Montméat.

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Montméat, P., Enot, T., Pellat, M. et al. Origin of the TTV of thin films obtained by temporary bonding ZoneBond® technology. Microsyst Technol 21, 987–993 (2015). https://doi.org/10.1007/s00542-015-2431-9

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  • DOI: https://doi.org/10.1007/s00542-015-2431-9

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