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A simple thermo-compression bonding setup for wire bonding interconnection in pressure sensor silicon chip packaging

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Abstract

In the process of piezo-resistive pressure sensor packaging, a simple thermo-compression bonding setup has been fabricated to achieve the wire bonding interconnection of a silicon chip with printed circuit board. An annealed gold wire is joined onto a pad surface with a needle-like chisel under a force of 0.5–1.5 N/point. The temperature of the substrate was maintained in the range of 150–200°C and the temperature of the chisel was fixed at around 150°C during wire bonding operation. The tensile strength of the wire bonding was measured with a bonding tester by the destructive-pulling experiment and was found to be at the average of 132 mN/mm2. The microstructure of the bonding point was examined by scanning electron microscopy. The interface of the thermo-compression boning was shown to possess an acceptable level of reliability for a micro-electromechanical system (MEMS)-based device. The results showed that this setup can be easily operated for fabrication and is suitable for fabricating not only low-cost pressure sensors, but also other MEMS devices.

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Acknowledgments

This work was supported by the National Science Foundation of China (No. 51175238), the Starting Foundation of Jiangsu University Advanced Talent (No. 09JDG045), and Chinese Post Doctor Special science Foundation (No. 201003557) and Industrial Supporting Plan of Zhengjiang City (No. GY20100010).

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Correspondence to Quan Wang.

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Wang, Q., Yang, X., Zhang, Y. et al. A simple thermo-compression bonding setup for wire bonding interconnection in pressure sensor silicon chip packaging. Microsyst Technol 17, 1629 (2011). https://doi.org/10.1007/s00542-011-1345-4

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  • DOI: https://doi.org/10.1007/s00542-011-1345-4

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