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Single crystalline silicon based surface micromachining for high precision inertial sensors: technology and design for reliability

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Abstract

In this paper, a foundry process for surface micromachined inertial sensors such as accelerometers or gyroscopes is introduced, with special attention on reliability aspects. Reliability was a major focus during the development phase, leading to the choice of the single crystalline silicon layer of an SOI device wafer as the mechanically active material. Glass frit wafer bonding is used for capping and hermetic sealing, but in addition to these fundamental reliability aspects, many influences on reliability must be considered, such as the risk of sticking, local stress concentration, electrical effects or the defined limitations of the mechanical movement in the interaction of design and technology. Reliability test results, as well as measures for improving the reliability and performance, are discussed in this paper.

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References

  • Bhardwaj J, Ashraf H, McQuarrie A (1997) Dry silicon etching for MEMS, The symposium on microstructures and microfabricated systems at the annual meeting of the electrochemical society, Montreal, Quebec, Canada

  • Böttge B, Dresbach Ch, Graff A, Bagdahn J (2007) Investigation of lead formation glass frit bonded interfaces. Conference on wafer bonding for MEMS technologies and wafer level integration, Halle/S. Germany

  • JEDEC/FSA Joint Publication (2004) Foundry Process Qualification Guidelines (Wafer Fabrication Manufacturing Sites) JP001.01 (Minor Revision to JP001, September 2002) MAY 2004 JEDEC Solid State Technology Association Fabless Semiconductor Association. http://www.jedec.org/download/search/JP001-01.pdf

  • Knechtel R (2005) Glass frit bonding—an universal technology for wafer level encapsulation and packaging. Symposium on design, test, integration and packaging of MEMS/MOEMS, Montreux, Switzerland, 12–14 May 2004. Springer, Microsystem Technologies ISSN: 0946-7076 (Paper) 1432–1858 (Online) Issue: Volume 12, Numbers 1–2. doi:10.1007/s00542-005-0022-x)

  • Schröpfer G, King D, Kennedy Ch, McNie M (2005) Advanced process emulation and circuit simulation for co-design of MEMS and CMOS devices. In: Proceedings symposium on design, test, integration and packaging of MEMS/MOEMS (DTIP), Montreux, Switzerland

  • X-FAB (2008a) Process specification XM-SC surface-micromachined capacitive MEMS XM10A17—Discrete Inertial Sensor Document PS_10_07 Release 1.0 January 2008 X-FAB Semiconductor Foundries AG

  • X-FAB (2008b) Design rule specification XM-SC surface-micromachined capacitive MEMS XM20A17—Discrete Inertial Sensor Document DR_10_07 Release 1.0 January 2008

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Acknowledgments

The author would like to thank his colleagues at X-FAB Semiconductor Foundries AG involved in this process, especially G. Hölzer (Process and FEM Simulations), S. Hering (measurement support), K. Freywald (process development) and A. Nevin. Special acknowledgements are to the partners in the process development, the Institute for Micro and Information Technology of the Hahn-Schickard-Society in Villiningen-Schwenningen as well as the Fraunhofer Institute ENAS Chemnitz.

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Correspondence to R. Knechtel.

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Knechtel, R. Single crystalline silicon based surface micromachining for high precision inertial sensors: technology and design for reliability. Microsyst Technol 16, 885–893 (2010). https://doi.org/10.1007/s00542-010-1062-4

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  • DOI: https://doi.org/10.1007/s00542-010-1062-4

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