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Design of bossed silicon membranes for high sensitivity microphone applications

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Abstract

This paper deals with the design optimization of new high sensitivity microphones in silicon on insulator (SOI) technology for gas sensing applications. A novel geometry of bossed silicon membranes used as mechanical transducer has been studied by finite element modelling. Device fabrication is achieved from SOI substrates through deep backside anisotropic etching and shallow front side reactive ion etching to define a bossed sensing membrane with two reinforced areas. Thus, the influence of thin film stresses on the device performance is largely decreased. Polysilicon gauges are located on the reinforced areas to get a better linearity in pressure.

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Authors and Affiliations

  1. LPM, UMR 5511, INSA Lyon, 7 av. Capelle bât. B. Pascal, 69621, Villeurbanne, France

    P. Martins & C. Malhaire

  2. Auxitrol SA, Esterline Sensors Group, Esterline Corporation 5, Allée Charles Pathé, 18941, Bourges Cedex 9, France

    S. Beclin, S. Brida, S. Metivet & O. Stojanovic

Authors
  1. P. Martins
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  2. S. Beclin
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  3. S. Brida
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  4. S. Metivet
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  5. O. Stojanovic
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  6. C. Malhaire
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Correspondence to P. Martins.

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Martins, P., Beclin, S., Brida, S. et al. Design of bossed silicon membranes for high sensitivity microphone applications. Microsyst Technol 13, 1495–1500 (2007). https://doi.org/10.1007/s00542-006-0347-0

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  • DOI: https://doi.org/10.1007/s00542-006-0347-0

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