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Wafer direct bonding with ambient pressure plasma activation

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Abstract

Ambient pressure plasma processes were applied for surface activation of semiconductor (Si, Ge and GaAs) and other wafers (glass) before direct wafer bonding for MEMS and engineered substrates. Surface properties of activated wafers were analysed. Caused by activation high bond energies were obtained for homogeneous (e.g. Si/Si) as well as for heterogeneous material combinations (for instance Si/Ge) after a subsequent low temperature annealing process at 200°C. The resulting bond energies are analogous or higher as obtained for low-pressure plasma activation processes. The advantages of the ambient pressure plasma processes are described; a technical solution is discussed demonstrating the low risk for contamination and radiation damage.

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Abbreviations

SSOI:

Strained silicon-on-insulator

SOI:

Silicon-on-insulator

MEMS:

Micro-electro-mechanical-system

CMOS:

Complementary metal oxide semiconductor

GeOI:

Germanium-on-insulator

AP:

Ambient pressure plasma

LP:

Low-pressure plasma

PE-CVD:

Plasma enhanced chemical vapour deposition

DBD:

Dielectric barrier discharge

SAM:

Scanning acoustic microscopy

AFM:

Atomic force microscopy

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Authors and Affiliations

  1. Süss MicroTec AG, Schleissheimer Strasse 90, 85748, Garching, Germany

    Markus Gabriel, Brad Johnson & Ralf Suss

  2. Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, 06120, Halle, Germany

    Manfred Reiche

  3. Fraunhofer Institute for Surface Engineering and Thin Films, Bienroder Weg 54E, 38108, Braunschweig, Germany

    Marko Eichler

Authors
  1. Markus Gabriel
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  2. Brad Johnson
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  3. Ralf Suss
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  4. Manfred Reiche
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  5. Marko Eichler
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Corresponding author

Correspondence to Markus Gabriel.

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Gabriel, M., Johnson, B., Suss, R. et al. Wafer direct bonding with ambient pressure plasma activation. Microsyst Technol 12, 397–400 (2006). https://doi.org/10.1007/s00542-005-0044-4

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  • DOI: https://doi.org/10.1007/s00542-005-0044-4

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