Abstract
In this work, a facile spray-assisted perfume atomizer technique was used to prepare CdO and Fe-doped CdO (CdO:Fe) thin films with varying concentrations of Fe (1, 3, and 5 wt%). The deposited films were characterized using different analytical techniques to realize the structural, morphological, optical, electrical, and photosensing properties. From X-ray diffraction (XRD) results, the CdO and CdO:Fe thin films have a cubic structure and an increase in crystallite size was observed for the CdO:Fe(3%) sample. The optical studies of the doped samples reveal a high absorption in the observed wavelength range and a decrease in optical bandgap values. The CdO:Fe(3%) sample exhibits a minimum resistivity value (4.02 × 10–3 Ωcm), high carrier concentration (22.92 × 1019 cm−3), and high mobility (6.78 cmV−1 s−1). The current–voltage characteristics suggest that the CdO:Fe(3%) sample has a lower ideality factor of 4.2, high photocurrent value of 1.62 × 10–2 A. It also has better photosensing parameter values such as responsivity of 0.15AW−1, the external quantum efficiency of 2.92 × 108 Jones, and detectivity of 50%, which are due to the synergistic effect of increased crystallite size, high light absorption, optimum bandgap, and better electrical properties of the CdO:Fe(3%) sample.
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The authors Tansir Ahamad and Saad M Alshehri thank to Researchers Supporting Project number (RSP-2020/29), King Saud University, Riyadh, Saudi Arabia.
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Rajini, M., Vinoth, S., Hariprasad, K. et al. Tuning the optoelectronic properties of n-CdO:Fe/p-Si photodiodes fabricated by facile perfume atomizer technique for photo-detector applications. Appl. Phys. B 127, 109 (2021). https://doi.org/10.1007/s00340-021-07658-x
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DOI: https://doi.org/10.1007/s00340-021-07658-x