Abstract
In this work, the effect of thermal annealing on the characteristics of silicon homojunction photodetector was studied. This homojunction photodetector was fabricated by means of plasma-induced etching of p-type silicon substrate and plasma sputtering of n-type silicon target in vacuum. The electrical and spectral characteristics of this photodetector were determined and optimized before and after the annealing process. The maximum surface reflectance of 1.89% and 1.81%, the maximum responsivity of 0.495 A/W and 0.55 A/W, the ideality factor of 1.80 and 1.99, the maximum external quantum efficiency of 76% and 83.5%, and the built-in potential of 0.79 V and 0.72 V were obtained before and after annealing, respectively.
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Open Access This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (https://creativecommons.org/licenses/by/4.0), which permits use, duplication, adaptation, distribution, and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
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Hammadi, O.A. Characteristics of heat-annealed silicon homojunction infrared photodetector fabricated by plasma-assisted technique. Photonic Sens 6, 345–350 (2016). https://doi.org/10.1007/s13320-016-0338-4
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DOI: https://doi.org/10.1007/s13320-016-0338-4