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Design and investigation of a balanced silicon-based plasmonic internal-photoemission detector

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Abstract

Silicon-based plasmon detector is a key component in designing CMOS-compatible integrated plasmonic circuits. Internal-photoemission plasmonic detectors in metal–semiconductor–metal (MSM) structure are promising devices for this purpose, because of their ability to detect infrared wavelengths. In this paper, a balanced MSM-integrated plasmon detector device is proposed to isolate the output from dark current. Performance characteristics of the new device are numerically simulated. In a specific bias point (V = 3 V), the output current is 3.18 × 10−5 A, responsivity is 0.1288 A/W, SNR is 21.7 dB and area is about 2 µm2. Simulation results for this balanced plasmon detector, in comparison with experimental results of previous single-MSM device, demonstrate considerable dark current reduction.

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Authors and Affiliations

  1. Photonics Research Laboratory, Electrical Engineering Department, Amirkabir University of Technology, Tehran, 15914, Iran

    Elahe Rastegar Pashaki, Hassan Kaatuzian & Hamed Ghodsi

  2. Electrical Engineering Department, Mazandaran University of Science and Technology, Behshahr, Iran

    Abdolber Mallah Livani

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  1. Elahe Rastegar Pashaki
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  2. Hassan Kaatuzian
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  3. Abdolber Mallah Livani
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  4. Hamed Ghodsi
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Correspondence to Hassan Kaatuzian.

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Rastegar Pashaki, E., Kaatuzian, H., Mallah Livani, A. et al. Design and investigation of a balanced silicon-based plasmonic internal-photoemission detector. Appl. Phys. B 125, 2 (2019). https://doi.org/10.1007/s00340-018-7111-x

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  • DOI: https://doi.org/10.1007/s00340-018-7111-x

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