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Investigation of germanium-based plasmonic-photo-detector improved by dual-absorption method using titanium nitride

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Abstract

Photo-detector being the key components of opto-electronic-integrated-circuits is being explored by researchers for performance enhancement and energy efficiency with various innovative techniques. Technology of plasmonic effects can enhance the near-infrared sensitivity of metal–semiconductor–metal detectors. Dielectric-loaded long-range surface-plasmon-polariton with wave-guide of metal stripe placed on crest of a semiconductor beam enclosed by second semiconductor can improve absorption mechanism in photo-detector. Because the metal stripe on semiconductor can cause hot electrons participate in transitions, increasing electron transport resulting in enhancement of internal-quantum-efficiency. Present work investigates germanium (Ge)-based plasmonic photo-detector, improved by dual-absorption method using Titanium Nitride (TiN). Paper proposes three photo-detector devices with finger width 5 µm, 2 µm and 1 µm over wavelength 1–3.7 µm. Device A with finger width 5 µm outperforms device B with finger width 2 µm by 77%. Further device A outperforms device C finger width 1 µm by 90.7%. For wavelength of 1.55 µm two mechanism EHP and IPE contribute Device A’s detection capability. The hot electrons created by surface plasmons in the metallic layer are produced toward Ge facing interface, allowing discovery of wavelengths approximately at 1.55 µm.

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  1. Chitkara University Institute of Engineering and Technology, Chitkara University, Rajpura, Punjab, India

    Harsimran Jit Kaur

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Kaur, H.J. Investigation of germanium-based plasmonic-photo-detector improved by dual-absorption method using titanium nitride. J Opt 52, 1818–1825 (2023). https://doi.org/10.1007/s12596-023-01231-9

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