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Field emission properties of a-CNx films prepared by pulsed laser deposition

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Abstract.

Amorphous carbon nitride (a-CNx) films were grown on silicon substrates by ArF excimer laser ablation of a graphite target in the presence of nitrogen at various gas pressures. By working at elevated pressures (up to 100 Pa), large amounts of nitrogen can be incorporated into the films (up to 40 at. %, which leads to a strong enhancement of their field emission properties. This behaviour was demonstrated to be mainly related to changes in the surface morphology of the samples, in connection with the development of graphite-like structures.

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Authors and Affiliations

  1. CNRS-PHASE, BP 20, 67037 Strasbourg Cedex 02, France, , , , , , FR

    E. Fogarassy, T. Szorényi & F. Antoni

  2. THALES-R&T, Domaine de Corbeville, 91404 Orsay Cedex, France, , , , , , FR

    G. Pirio, J. Olivier & P. Legagneux

  3. SOPRA S.A., 26, rue Pierre Joigneaux, 92270 Bois-Colombes, France, , , , , , FR

    P. Boher

Authors
  1. E. Fogarassy
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  2. T. Szorényi
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  3. F. Antoni
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  4. G. Pirio
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  5. J. Olivier
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  6. P. Legagneux
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  7. P. Boher
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Additional information

Received: 22 February 2002 / Accepted: 3 March 2002 / Published online: 10 September 2002

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ID="*"Corresponding author. Fax: +33-(0)/388-106-230, E-mail: fogarassy@phase.c-strasbourg.fr

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Fogarassy, E., Szorényi, T., Antoni, F. et al. Field emission properties of a-CNx films prepared by pulsed laser deposition . Appl Phys A 76, 15–19 (2003). https://doi.org/10.1007/s003390201408

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  • DOI: https://doi.org/10.1007/s003390201408

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