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Formation and charge control of a quantum dot by etched trenches and multiple gates

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Abstract.

We have fabricated a GaAs/InGaAs/AlGaAs-based single-electron transistor (SET) formed by etched trenches and multiple gates. Clear Coulomb-blockade oscillations have been observed when the gate biases are scanned. By self-consistently solving three-dimensional Schrödinger and Poisson equations, we have studied the energy-band structure and the carrier distribution of our SET. General agreement between numerical simulation results and measurement data has been obtained, thus indicating the effectiveness of our SET-device design as well as the necessity of a complete three-dimensional quantum-mechanical simulation.

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Authors and Affiliations

  1. Institute of Physics, Chinese Academy of Science, No. 8, South 3rd Street, Zhongguancun, 100 080 Beijing, P.R. China, , , , , , CN

    Y. Fu & T.H. Wang

  2. Physical Electronics and Photonics, Microtechnology Centre at Chalmers, Department of Microelectronics and Nanoscience, Chalmers University of Technology, Fysikgränd 3, 412 96 Göteborg, Sweden, , , , , , SE

    M. Willander

Authors
  1. Y. Fu
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  2. M. Willander
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  3. T.H. Wang
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Received: 18 October 2001 / Accepted: 6 January 2002 / Published online: 20 March 2002

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Fu, Y., Willander, M. & Wang, T. Formation and charge control of a quantum dot by etched trenches and multiple gates . Appl Phys A 74, 741–745 (2002). https://doi.org/10.1007/s003390201298

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  • DOI: https://doi.org/10.1007/s003390201298

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