Abstract.
Some examples of interface studies are reported which show their close link with progress in III–V modern semiconductor device physics and technology. The surface electronic properties investigated in-situ by reflectance anisotropy spectroscopy during InGaP/InP growth (metal-organic vapor-phase epitaxy) are essential for the control of ordering phenomena in these layers, which is relevant for high-performance optoelectronic devices. Studies of electronic interface states at metal/narrow-gap III–V semiconductors are presented, which enabled the successful preparation of semiconductor/superconductor hybrid devices. For group-III nitrides with wurtzite structure the presence of fixed polarization interface charges yields new challenges in order to understand and control Schottky-barrier heights, band offsets and 2D confinement in heterostructure field-effect transistors.
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Received: 26 April 2001 / Accepted: 23 July 2001 / Published online: 3 April 2002
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Rizzi, A., Lüth, H. III–V semiconductor interface properties as a knowledge basis for modern heterostructure devices . Appl Phys A 75, 69–77 (2002). https://doi.org/10.1007/s003390101056
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DOI: https://doi.org/10.1007/s003390101056