Defect capture under rapid solidification of the melt induced by the action of femtosecond laser pulses and formation of periodic surface structures on a semiconductor surface

Abstract.

A theory of defect-strain instability with formation of periodic surface relief in semiconductors irradiated by ultra-short (τ_p=10^-13 s) powerful laser pulses is developed. The period and time of formation of surface relief are calculated. Regimes of multi-pulse laser ablation leading to formation of either a smooth surface or arrays of surface-relief spikes are pointed out and corresponding experimental results are interpreted from the viewpoint of the developed theory.