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Influence of growth conditions on the incorporation of substitutional C in Si1-x-yGexCy alloy on Si by chemical vapor deposition using C2H4

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1-x-y

GexCy have been grown on Si(100) substrates by rapid thermal chemical vapor deposition (RTCVD) using C2H4 as C source. The composition and microstructure of Si1-x-yGexCy films were characterized by Auger electron spectroscopy, Raman spectra and Fourier-transform infrared spectroscopy. The results show that lower temperature and higher SiH4/C2H4 flow ratio are helpful in forming the substitutional C and improving the crystal quality. A possible mechanism for C incorporation in Si1-x-yGexCy layers grown by RTCVD using C2H4 is proposed.

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Authors and Affiliations

  1. Department of Physics, Nanjing University, Nanjing, 210093, P.R. China (Fax: +86-25/360-8130, E-mail: ydzheng@netra.nju.edu.cn), , , , , , CN

    N. Jiang, L. Zang, R.L. Jiang, S.M. Zhu, P. Han, X.B. Liu, X.M. Cheng, R.H. Wang & Y.D. Zheng

  2. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P.R. China, , , , , , CN

    X.N. Hu & J.X. Fang

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  1. N. Jiang
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  2. L. Zang
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  3. R.L. Jiang
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  4. S.M. Zhu
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  5. P. Han
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  6. X.B. Liu
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  7. X.M. Cheng
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  8. R.H. Wang
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  9. Y.D. Zheng
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  10. X.N. Hu
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  11. J.X. Fang
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Received: 26 April 1998 / Accepted: 28 September 1998 / Published online: 24 February 1999

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Jiang, N., Zang, L., Jiang, R. et al. Influence of growth conditions on the incorporation of substitutional C in Si1-x-yGexCy alloy on Si by chemical vapor deposition using C2H4. Appl Phys A 68, 457–460 (1999). https://doi.org/10.1007/s003390050923

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  • DOI: https://doi.org/10.1007/s003390050923

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