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Crystallization kinetics of amorphous aluminum–tungsten thin films

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W18 to Al62W38 compounds ranged from 800 K to 920 K. The activation energy for the crystallization and the Avrami exponent were determined. The results indicated that the crystallization mechanism in films with higher tungsten content was a diffusion-controlled process, whereas in films with the composition similar to the stoichiometric compound (Al4W), the interface-controlled crystallization probably occurred.

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Authors and Affiliations

  1. Rugjer Bošković Institute, Division of Materials Science, Bijenička cesta 54, P.O.B. 1016, Zagreb, Croatia, , , , , , CR

    T. Car & N. Radić

  2. Institute of Physics, Bijenička 46, P.O.B. 304, HR-10000 Zagreb, Croatia, , , , , , CR

    J. Ivkov

  3. Faculty of Sciences, Physics Department, Bijenička 32, P.O.B. 162, HR-10000 Zagreb, Croatia, , , , , , CR

    E. Babić & A. Tonejc

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  1. T. Car
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  2. N. Radić
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  3. J. Ivkov
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  4. E. Babić
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  5. A. Tonejc
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Received: 30 March 1998/Accepted: 9 September 1998

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Car, T., Radić, N., Ivkov, J. et al. Crystallization kinetics of amorphous aluminum–tungsten thin films . Appl Phys A 68, 69–73 (1999). https://doi.org/10.1007/s003390050855

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  • DOI: https://doi.org/10.1007/s003390050855

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