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Si1-x/Si heterostructures have been obtained. Here the chemical effects seem to be of less importance. The Fermi-level effect determines the ionized boron solubilities in GexSi1-x and in Si, as well as the thermal equilibrium concentration of the singly-positively-charged crystal self-interstitials I+ which governs the boron diffusion process. The junction carrier concentration affects the concentration of I+ and solubility of B in the region and hence controls B diffusion across the heterojunction.
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Received: 20 August 1998/Accepted: 23 September 1998
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Chen, CH., Gösele, U. & Tan, T. Dopant diffusion and segregation in semiconductor heterostructures: Part 2. B in GexSi1-x/Si structures . Appl Phys A 68, 19–24 (1999). https://doi.org/10.1007/s003390050848
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DOI: https://doi.org/10.1007/s003390050848