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(001) epitaxial thin films deposited on Si(001) with yttria-stabilized zirconia buffers have been obtained for the first time at room temperature by pulsed-laser deposition. The influence of oxygen pressure on the crystal quality of CeO2 was studied for the films deposited at 100 °C. The rocking curve full width at half maximum of the CeO2(002) peak for films deposited at room temperature and 100 °C was between 1° and 2°, for oxygen pressures below 3×10-2 mbar. The best crystal quality was obtained at around 3×10-3 mbar. Epitaxial growth at room temperature was confirmed by cross-sectional transmission electron microscopy. Scanning electron microscopy and atomic force microscopy revealed very smooth surfaces for oxygen pressure below 3×10-2 mbar, with rms roughness values around 0.3 nm over 5 μm×5 μm.
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Received: 25 September 1997/Accepted: 22 April 1998
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Trtík, V., Sánchez, F., Aguiar, R. et al. Room-temperature epitaxial growth of CeO2(001) films on YSZ buffered Si(001) substrates . Appl Phys A 67, 455–457 (1998). https://doi.org/10.1007/s003390050803
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DOI: https://doi.org/10.1007/s003390050803