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Vacancies and impurities in InP studied using positron lifetime and an improved Doppler-broadening spectrometer

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- in Zn-doped p-InP. The line-shape parameter measured by an improved Doppler-broadening spectrometer shows a significant difference between n-type and Fe-doped SI-InP materials: the S-parameter varies from 0.5203 in n-InP to 0.5184 in Fe-doped SI-InP by four times the standard deviation. A possible reason for this difference is discussed.

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Authors and Affiliations

  1. Department of Physics, Wuhan University, Wuhan 430072, P.R. China (Fax: +86-27/7882087, E-mail: chenzq@positron.whu.edu.cn), , , , , , CN

    Z.Q. Chen, X.W. Hu & S.J. Wang

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  1. Z.Q. Chen
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  2. X.W. Hu
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  3. S.J. Wang
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Received: 7 January 1997/Accepted: 8 September 1997

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Chen, Z., Hu, X. & Wang, S. Vacancies and impurities in InP studied using positron lifetime and an improved Doppler-broadening spectrometer . Appl Phys A 66, 435–440 (1998). https://doi.org/10.1007/s003390050690

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  • DOI: https://doi.org/10.1007/s003390050690

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