Skip to main content
SpringerLink
Log in

Crystalline SiC thin film deposition by laser ablation: influence of laser surface activation

  • Regular paper
  • Published:
Applied Physics A Aims and scope Submit manuscript

2

) of the growing SiC film improved the film microstructure equivalent to an increase of the substrate temperature by 150–200 °C.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

Author information

Authors and Affiliations

  1. Institut für Physikalische Hochtechnologie e.V., Helmholtzweg 4, D-07743 Jena, Germany, , , , , , DE

    M. Diegel, F. Falk, R. Hergt & H. Stafast

  2. Friedrich-Schiller-University, D-07743 Jena, Germany, , , , , , DE

    H. Hobert

Authors
  1. M. Diegel
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. F. Falk
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. R. Hergt
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. H. Hobert
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. H. Stafast
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Received: 18 August 1997/Accepted: 8 September 1997

Rights and permissions

Reprints and permissions

About this article

Cite this article

Diegel, M., Falk, F., Hergt, R. et al. Crystalline SiC thin film deposition by laser ablation: influence of laser surface activation . Appl Phys A 66, 183–187 (1998). https://doi.org/10.1007/s003390050653

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1007/s003390050653

Search

Navigation