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Optically pumped, indirect-gap \(Al_{\rm x}Ga_{1-{\rm x}}As\) lasers

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Abstract.

We demonstrate optically pumped lasers with active layers of indirect-gap Al\(_{\rm x}\)Ga\(_{1-{\rm x}}\)As operating up to room temperature. The emission wavelength is 609 nm at 20 K and 639 nm at 300 K, respectively. The laser threshold shows a weak sensitivity on the lattice temperature. The relevant parameters of the lectron-hole plasma close to threshold are determined from gain spectroscopy using the variable stripe-length method.

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Received: 20 June 1996 / Accepted: 14 August 1996

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Wörner, A., Westphäling, R., Kalt, H. et al. Optically pumped, indirect-gap \(Al_{\rm x}Ga_{1-{\rm x}}As\) lasers . Appl Phys A 64, 73–76 (1996). https://doi.org/10.1007/s003390050446

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  • DOI: https://doi.org/10.1007/s003390050446

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