Abstract.
GaN one-dimensional materials with different morphologies were formed on LaAlO3 crystal, silicon crystal and quartz glass substrates through a simple sublimation method. They were characterized by powder X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM) and energy-dispersive X-ray (EDX) spectroscopy. FE-SEM images showed that the morphologies of the one-dimensional materials included straight nanorods, curved nanowires, nanoribbons, zigzag nanorods and beaded or capture-tree nanorods. XRD and EDX studies indicated that all the one-dimensional materials were wurtzite GaN.
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Received: 14 July 2000 / Accepted: 17 July 2000 / Published online: 20 September 2000
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Li, J., Qiao, Z., Chen, X. et al. Morphologies of GaN one-dimensional materials. Appl Phys A 71, 587–588 (2000). https://doi.org/10.1007/s003390000684
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DOI: https://doi.org/10.1007/s003390000684