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Effects of electron irradiation on analog and linearity performance of InP-based HEMT

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Abstract

In this paper, the effect of electron irradiation on analog and linearity performance for InP-based HEMT is investigated. The electron energy and fluence are 1 MeV and 1 × 1016 cm−2, respectively. The results show that the analog performance parameters, such as gm, gd, and TFG, indicate different variation trends after electron irradiation. Specifically, gm and gd are reduced, while TGF is increased. Therefore, the analog performance is improved for InP-based HEMT after electron irradiation. In addition, linearity metrics such as gm2, gm3, VIP2, VIP3, IIP3, and IMD3 have also been analyzed. The results indicate that the linearity performance improves for the device after electron irradiation.

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Acknowledgements

This work was supported in part by the National Natural Science Foundation of China under Grant 62204094, in part by the China Postdoctoral Science Foundation under Grant 2021M700685, in part Henan Provincial Science and Technology Research Project under Grant 232102210173, 232102311204, 162102210111, in part by the Henan Province Joint Fund Project of Science and Technology under Grant 225200810085 and in part Henan Higher Education Teching Reform Planunder Project under Grant 2021SJGLX533.

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Authors and Affiliations

  1. Henan Provincial Key Laboratory of Intelligent Lighting, Huanghuai University, Zhumadian, 463000, China

    Shuxiang Sun, Ruxian Yao & Haitao Wu

  2. School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450001, China

    Yinghui Zhong

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  1. Shuxiang Sun
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  2. Yinghui Zhong
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  4. Haitao Wu
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Contributions

SS: data curation; formal analysis; YZ: investigation; validation; SS and RY: writing original draft; HW: writing, review and editing; conceptualization.

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Correspondence to Shuxiang Sun, Yinghui Zhong or Ruxian Yao.

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Sun, S., Zhong, Y., Yao, R. et al. Effects of electron irradiation on analog and linearity performance of InP-based HEMT. Appl. Phys. A 129, 776 (2023). https://doi.org/10.1007/s00339-023-07072-4

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