Abstract
Understanding the wetting behavior of copper droplet on graphite substrate has important engineering significance for guiding the preparation of Cu/graphite (Cu–C) composite materials. This paper used the molecular dynamics simulation method to analyze the wetting behavior of Cu droplet on the graphite substrate with different Ar pressures at the atomic scale, which ranged from 0 to 3 atm. The molecular dynamics simulation results indicated that for temperatures below 1300 K, Ar pressure hindered the wetting of droplet, while for temperatures above 1300 K, Ar pressure promoted the wetting process of droplet on the graphite substrate. However, in systems with Ar pressure higher than 1.2 atm, the improvement of wetting by Ar pressure no longer increases. In addition, Ar pressures increased the potential of mean force of Cu droplets leaving the graphite substrates, making it more difficult for droplets to detach from the substrates.
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This research was financially supported by “National Natural Science Foundation of China (Grant no. 51274040)”.
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JN designed analysis methods, completed calculations and thesis writing. XH participated in guiding the article ideas. XQ participated in the technical support of analysis and calculation. JW and ZZ participated in the discussion of the calculation contents and potential functions. The first draft of the manuscript was written by JN and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.
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Nan, J., He, X., Qu, X. et al. Effect of Ar pressure on the wettability of copper droplet on graphite substrate by molecular dynamics simulation. Appl. Phys. A 129, 732 (2023). https://doi.org/10.1007/s00339-023-07008-y
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DOI: https://doi.org/10.1007/s00339-023-07008-y