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Impact of controlling the barrier height on fabrication of high performance β-Ga2O3 solar-blind photodetectors

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Abstract

Photodetectors based on Ga2O3 have stimulated extensive attention for diverse applications from civil and military filed. Great progress has been made in the fabrication of Ga2O3-based photodetector, but they still suffer from their low detectivity. In this study, we present an investigation to achieve ultra-low dark current and high detectivity solar-blind for Ga2O3-based photodetector by controlling the defect concentration and interface state well with the pulsed laser deposition method. By using pulsed laser deposition, the stoichiometric multi-component film can be obtained. It has been found that the excellent performances of our device (ultrathin thickness of 47 nm) with a low dark current of pA as well as a high sensitivity of 6.25 × 103 (Iphoto/Idark) are obtained in the as-grown PD under an oxygen pressure of 50 mTorr. Through high temperature annealing of 800 °\(\mathrm{C}\) and high oxygen pressure of 50 mTorr, the fast response speed (a decay time of 15 ms) is achieved. These are attributed to the co-effect of well-controlled high mobility, reduced oxygen vacancy defects in Ga2O3 film and increased Schottky barrier height between metal oxide films and metal contact. The electronic transport mechanism in the devices is described in detail to reveal clearly the influence of gas pressure on the optoelectronic properties of photodetectors, which open a promising direction for the development of high-quality economical products.

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Acknowledgements

This work was supported by the excellent research team development program grant funded by Vietnam Academy of Science and Technology (VAST) (NCXS 02.05/22-23) and in part supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (NRF-2020R1A4A4078674)

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Authors and Affiliations

  1. Institute of Physics, Vietnam Academy of Science and Technology, No. 10 Dao Tan, Ba Dinh, Ha Noi, Vietnam

    Thi Kim Oanh Vu, Minh Tien Tran, Bui Thi Thu Phuong & Nguyen Thi Minh Hien

  2. Graduate University of Science and Technology, Vietnam Academy of Science and Technology, Ha Noi, Vietnam

    Thi Kim Oanh Vu

  3. Department of Physics and Research Institute for Natural Sciences, Hanyang University, Seoul, 04763, Republic of Korea

    Eun Kyu Kim

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  1. Thi Kim Oanh Vu
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Contributions

In this article, the author’s contribution are as follow: TKOV: study conception and design, data collection, and manuscript preparation. MTT: data collection and analysis and interpretation of results. BTTP: data collection and analysis and interpretation of results. NTMH: data collection and analysis and interpretation of results. EKK: study conception and design, and manuscript preparation.

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Vu, T.K.O., Tran, M.T., Phuong, B.T.T. et al. Impact of controlling the barrier height on fabrication of high performance β-Ga2O3 solar-blind photodetectors. Appl. Phys. A 129, 600 (2023). https://doi.org/10.1007/s00339-023-06883-9

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