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Effect of (Bi, Li) co-doping on dielectric and ferroelectric properties in BaZr0.15Ti0.85O3 ceramics

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Abstract

Bi and Li co-doping BaZr0.15Ti0.85O3 ceramics were fabricated by the solid-state method, and investigated the impact on the microstructural, dielectric, ferroelectric and energy storage properties. XRD results show that the structure is perovskite and there is no secondary phase in all samples. SEM pictures indicate that the average grain size significantly decreases as the doping concentration increase. In addition, the phase transition peak is broadened and the Curie temperature shifts towards lower temperature. This phenomenon provides a significant possibility for the application to room temperature, and diffuse phase transition occurs. Moreover, P–E hysteresis loops of all samples demonstrate that remnant polarization and saturated polarization diminish as the doping concentration increases. A high energy storage density of 1.23 J/cm3 is obtained in the doped sample, and the energy storage efficiency is also significantly enhanced compared with the undoped sample.

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Data available on request from the authors.

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Acknowledgements

This work has been financially supported by the National Natural Science Foundation of China (Nos. 51402091, 61901161), the Scientific Research Project in Henan Normal University (No. 20210376), the Scientific Research Fund of Zhejiang Provincial Education Department (No. 2021R401195), the National University Student Innovation Program (No. 202010476023), and the University Student Innovation Program in Henan Normal University (Nos. 20200208, 20200209, 20200212).

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Author notes

  1. R. Y. Zhang, H. N. Li, B. H. Zhang and Y. Y. Li have contributed equally to this work.

Authors and Affiliations

  1. Henan Key Laboratory of Photovoltaic Materials, School of Physics, National Demonstration Center for Experimental Physics Education, Henan Normal University, Xinxiang, 453007, People’s Republic of China

    X. W. Wang, R. Y. Zhang, H. N. Li, B. H. Zhang, Y. Y. Li, Z. Y. Ren, Y. D. Hao, J. Feng, Y. C. Shi, M. M. Yang, X. F. Li, Y. C. Hu, J. Shang & S. Q. Yin

  2. Institute of Semiconductors, South China Normal University, Guangzhou, 510631, People’s Republic of China

    M. M. Yang

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Wang, X.W., Zhang, R.Y., Li, H.N. et al. Effect of (Bi, Li) co-doping on dielectric and ferroelectric properties in BaZr0.15Ti0.85O3 ceramics. Appl. Phys. A 129, 283 (2023). https://doi.org/10.1007/s00339-023-06573-6

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