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Performance analysis of ITCs on analog/RF, linearity and reliability performance metrics of tunnel FET with ultra-thin source region

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Abstract

The generation and accumulation of trap charges at oxide-semiconductor contact is a crucial point to consider since it affects device performance and reliability. This paper aimed to provide a comprehensive assessment of interface trap charges on the characteristics of a ultra-thin source region-based F-shaped Tunnel FET (UTS-F-TFET) with theoretical and numerical calculation of important frequency and linearity parameters. Comparative research is carried out to opt for the best lower bandgap material for source region to optimize the analog functionality of UTS-F-TFET. With a steeper subthreshold slope, the UTS-F-TFET has increased current carrying capabilities and reduced ambipolar behavior. This research aims to investigate the impact of ITCs on DC characteristics (Thermal equilibrium state, ON and OFF state) and analog/RF performance of the simulated device. Moreover, the consequence of ITCs on linearity figure of merits with reliability consideration is also investigated. As per this investigation, the proposed TFET structure exhibited minimal distortion in linearity metrics with negligible influence of ITCs. As a result, the proposed UTS-F-TFET is compatible with ultra-low power high-frequency operations with minimum distortion.

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Acknowledgements

The authors would like to thank Dr. Dip Prakash Samajdar from Department of Electronics and Communication Engineering, PDPM Indian Institute of Information Technology, Design & Manufacturing, Jabalpur, Madhya Pradesh, India for providing valuable suggestions and support to carry out this research work.

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  1. Electronics and Communication Engineering Department, NIT Hamirpur, Hamirpur, Himachal Pradesh, 177005, India

    Prabhat Singh & Dharmendra Singh Yadav

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  1. Prabhat Singh
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  2. Dharmendra Singh Yadav
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PS: Conceptualization, data curation, formal analysis, methodology, investigation, writing-original draft. DSY: Supervision, validation, visualization, writing-review and editing.

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Correspondence to Prabhat Singh.

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Singh, P., Yadav, D.S. Performance analysis of ITCs on analog/RF, linearity and reliability performance metrics of tunnel FET with ultra-thin source region. Appl. Phys. A 128, 612 (2022). https://doi.org/10.1007/s00339-022-05741-4

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