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Optical and electrical properties of Al1-xInxN films with a wide middle-composition range by RF sputtering

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Abstract

Al1-xInxN films with a wide middle-composition range were deposited on Si/glass substrate by radio-frequency magnetron sputtering. The microstructures of as-grown Al1-xInxN films were characterised by AFM, SEM, and EDS. The optical bandgap of Al1-xInxN films can be tuned from 1.85 to 2.93 eV by decreasing the In content from 0.7 to 0.3, covering the whole visible region. Raman spectroscopy demonstrates A1 and E2 (high) phonon modes in the Al1-xInxN films. The photoluminescence spectra of Al1-xInxN films reveals the emission band originates from the band edge-related radiation. The optical bowing parameter of Al1-xInxN films is confirmed to be 2.28 eV. The conductivity of the films increases with increasing In content. The I-V curves show the Al1-xInxN films form quasi-Ohmic contact with W electrodes.

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Acknowledgements

This work was financially supported by the Natural Science Foundation Guidance Plan Project of Liaoning province (2019-ZD-0254), Opening Foundation of Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education (2017004) and Basic Research Program of Educational Commission of Liaoning province (Grant No. LG 201910 and LG 201716). Open Project of State Key Laboratory of Superhard Materials, Jilin University (202004)

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  1. School of Science, Shenyang Ligong University, Shenyang, 110159, China

    JianJin Chen, DongLi Qi, JianYu Song & LongHai Shen

  2. Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Changchun, 136000, China

    XueFei Li

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Chen, J., Qi, D., Li, X. et al. Optical and electrical properties of Al1-xInxN films with a wide middle-composition range by RF sputtering. Appl. Phys. A 128, 142 (2022). https://doi.org/10.1007/s00339-022-05289-3

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