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A two-step method to obtain the 2D layers of SnSe2 single phase and study its physical characteristics for photovoltaic and photo-converter devices

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Abstract

The two-dimensional (2D) layers of SnSe2, used for various photo-convertor and photovoltaic device applications, were synthesized using a two-step procedure. The Sn-Se alloy was prepared by direct fusion at 1125 °C in a vacuum-sealed quartz ampoule at stage one. Stage two deals with the deposition of 2D layers of Sn-Se alloy on corning glass substrate by thermal evaporation followed by their annealing under vacuum at temperatures between 323 and 573 K. The characteristics of Sn-Se 2D layers vary with change in the annealing temperature. The 2D layers obtained at annealing temperatures (Ta) between 473 and 573 K show high absorption coefficient (α) > 1 × 105 cm−1; their optical bandgap (Eg) value tunes between 1.84 and 1.96 eV. This bandgap range matches the visible region of the EM spectrum, indicating that these layers are suitable for photovoltaic solar cells. The re-evaporation of 'Se' from the deposited layers was observed at high temperatures, which causes porosity in the synthesized layers. The high porosity value in the SnSe2 layers was observed at Ta = 573 K; the films obtained at this temperature provide the mobility value of 677cm2/V, indicating the layers are more favorable to the electrical behavior of devices.

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Acknowledgements

The authors are thankful to the university grants commission (UGC), Government of India, to award the major research project (UGC-MRP) to the corresponding author. To extend this work's facilities, the authors are also thankful to CMSE, National Institute of Technology (NIT), Hamirpur (HP), India.

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  1. Department of Physics, University of Jammu, Jammu, 180006, J&K, India

    Naresh Padha & Shammi Kumar

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  1. Naresh Padha
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Correspondence to Naresh Padha.

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Padha, N., Kumar, S. A two-step method to obtain the 2D layers of SnSe2 single phase and study its physical characteristics for photovoltaic and photo-converter devices. Appl. Phys. A 127, 877 (2021). https://doi.org/10.1007/s00339-021-04992-x

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