Abstract
Bulk SnSe2 was prepared by melting the constituents in stoichiometric proportions and thin films of this material were grown by a flash evaporation technique. X-ray and electron diffraction methods were used for characterization of the bulk material and the films. The effect of substrate temperature on the structural properties, composition and electrical resistivity of the films have been studied. It was found that single-phase polycrystalline stoichiometric films of SnSe2 can be grown in the substrate temperature range 398 to 623 K. The films deposited at 523 K had the minimum electrical resistivity.
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Patel, S.M., Patel, S.S. Optimization of growth conditions for SnSe2 thin films. J Mater Sci 24, 3245–3248 (1989). https://doi.org/10.1007/BF01139047
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DOI: https://doi.org/10.1007/BF01139047