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Gallium nitride wafer slicing by a sub-nanosecond laser: effect of pulse energy and laser shot spacing

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Abstract

Gallium nitride (GaN)-based devices surpass the traditional silicon-based power devices in terms of higher breakdown voltage, faster-switching speed, higher thermal conductivity, and lower on-resistance. However, heteroepitaxial GaN growths like GaN on sapphire are not suitable for power devices due to the threading dislocation densities as high as 108/cm2. Recently, homoepitaxial GaN growth has become possible thanks to the native GaN substrates with dislocation densities in the order of 104/cm2 but the extremely high cost of the GaN substrates makes the homoepitaxy method unacceptable for industrial applications, and the slicing of wafers for reusing them is an effective solution for cost reduction. In this study, we will investigate a route for slicing the GaN single crystal substrate by controlling the laser pulse energy and changing the distance between each laser shot. The 2D and 3D crack propagations are observed by a multiphoton confocal microscope, and the cross section of samples is observed by a scanning electron microscope (SEM). The results showed that two types of radial and lateral cracking occurred depending on the pulse energy and shot pitch, and controlling them was of importance for attaining a smooth GaN substrate slicing. Cross-sectional SEM images showed that at suitable pulse energy and distance, crack propagation could be controlled with respect to the irradiation plane.

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Funding

Part of this research was conducted under a contract of R&D for expansion of radio wave resources (JPJ000254), organized by the Ministry of Internal Affairs and Communications, Japan.

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Authors and Affiliations

  1. Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan

    Hadi Sena, Atsushi Tanaka, Yoshio Honda & Hiroshi Amano

  2. National Institute for Materials Science, Tsukuba, 987-6543, Japan

    Atsushi Tanaka

  3. Research and Development Department, Electron Tube Division, Hamamatsu Photonics K. K, Shizuoka, 438-0193, Japan

    Yotaro Wani, Tomomi Aratani, Toshiki Yui, Daisuke Kawaguchi, Ryuji Sugiura & Yasunori Igasaki

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  1. Hadi Sena
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Sena, H., Tanaka, A., Wani, Y. et al. Gallium nitride wafer slicing by a sub-nanosecond laser: effect of pulse energy and laser shot spacing. Appl. Phys. A 127, 648 (2021). https://doi.org/10.1007/s00339-021-04808-y

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