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Temperature analysis of the Gaussian distribution modeling the barrier height inhomogeneity in the Tungsten/4H-SiC Schottky diode

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Abstract

The temperature dependence of the electrical properties of the Schottky barrier contact W/4H-SiC is studied in term of the Werner’s model assuming a Gaussian distribution of the barrier height to model the inhomogeneity of the Schottky interface. The Gaussian distribution is characterized by the parameters \(\overline{\phi }_{B}\) as a mean barrier height, ρ2, ρ3 as coefficients quantifying the barrier deformation and σs as a standard deviation. The effect of the series resistance Rs and its relation with the standard deviation σs is also reported. A vertical optimization process is used to extract simultaneously all the parameters cited above as function of temperature from the forward current–voltage (I-V) characteristics at temperatures ranging from 303 to 448 K. The temperature dependence of the characterized parameters of the W/4H-SiC Schottky structure enables us to quantify the inhomogeneity state of the Schottky barrier height prevailing at the MS interface in terms of those extracted parameters.

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Acknowledgements

One of the authors S. Toumi would like to thank Pr T. Guerfi for his assistance in the correction of the present paper and for numerous fruitful discussions.

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Authors and Affiliations

  1. Laboratoire Optoélectronique Et Composants, Department of Physics, Sétif, Algeria

    S. Toumi & Z. Ouennoughi

  2. Department of Physics, Faculty of Science, University of Boumerdes, Boumerdes, Algeria

    S. Toumi

  3. University Erlangen, Cauerstr. 8, 91058, Erlangen, Germany

    R. Weiss

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  1. S. Toumi
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  2. Z. Ouennoughi
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Toumi, S., Ouennoughi, Z. & Weiss, R. Temperature analysis of the Gaussian distribution modeling the barrier height inhomogeneity in the Tungsten/4H-SiC Schottky diode. Appl. Phys. A 127, 661 (2021). https://doi.org/10.1007/s00339-021-04787-0

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