Abstract
The temperature dependence of the parameters related to the barrier height inhomogeneities for Mo/4H–SiC Schottky diode in 298–498 K temperature range has been investigated. Due to the barrier height inhomogeneities that prevail at the interface of the Schottky diode, a Gaussian distribution of the barrier height is assumed. We have extracted simultaneously, for every temperature, all the parameters characterizing the barrier height such as the mean barrier height \( \bar{\phi }_{{{\text{B}}0}} \), the coefficients ρ2, ρ3 quantifying the deformation of the barrier height, the corresponding temperature T0 modeling the divergence of the ideality factor n from the unity, the standard deviation of the Gaussian distribution of the barrier σs and also the series resistance Rs using a vertical optimization process on the current without any graphical extraction about ρ2, ρ3, \( \bar{\phi }_{{{\text{B}}0}} \), σs and Rs. The extracted parameters like (\( \bar{\phi }_{{{\text{B}}0}} \), ρ2, ρ3, σs, Rs) were found to be a temperature dependent. Moreover, an excellent agreement was obtained between the I–V–T plots calculated with the extracted parameters using a vertical optimization process with the experimental one.
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Acknowledgements
One of the authors S. Toumi would like to thank Dr T. Guerfi for his assistance in the correction of the present paper and for numerous fruitful discussions.
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Toumi, S., Ouennoughi, Z. A vertical optimization method for a simultaneous extraction of the five parameters characterizing the barrier height in the Mo/4H–SiC Schottky contact. Indian J Phys 93, 1155–1162 (2019). https://doi.org/10.1007/s12648-019-01393-y
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DOI: https://doi.org/10.1007/s12648-019-01393-y
Keywords
- Mo/4H–SiC Schottky diode
- Metal/semiconductor interface inhomogeneities
- Barrier’s height parameters
- T 0-effect
- Vertical optimization method