Abstract
In this paper, a T gate head AlGaN/GaN high-electron-mobility transistor (HEMT) on BGO substrate is proposed and optimization is done for channel length, gate length and gate position. The dc and ac characteristics of the devices under consideration are analysed using Silvaco TCAD software. The threshold voltage and transconductance of the proposed HEMT are extracted from the DC characteristics. The unity gain cut-off frequency (fT) and maximum oscillation frequency (fmax) are analysed for comparing the radio frequency characteristics. The T gate AlGaN/GaN HEMT on BGO substrate with channel length of 200 nm, gate length of 20 nm, gate source distance of 100 nm and gate drain distance of 80 nm exhibits optimum values for fT and fmax of 265 GHz and 900 GHz. The RF performance of the optimized device is compared with other related recent technologies and found that the proposed device is superior among them.
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Authors would like to convey their sincere thanks to Department of Avionics, Indian Institute for Space Science & Technology, Trivandrum, for providing VLSI & Micro systems Laboratory to complete the work.
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All authors contributed to the study, conception and design. Data collection, material preparation and analysis were performed by Mrs. Anju S, Dr. V Suresh Babu, and Dr. Geenu Paul. The manuscript was written by Mrs. Anju S and all authors commented on the previous versions of the manuscript. All authors read and approved the final manuscript.
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Anju, S., Babu, V.S. & Paul, G. Design optimization of high-frequency AlGaN/GaN HEMT on BGO substrates. Appl. Phys. A 127, 405 (2021). https://doi.org/10.1007/s00339-021-04550-5
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DOI: https://doi.org/10.1007/s00339-021-04550-5