Abstract
This research utilizes electrohydrodynamic printing to fabricate a transparent memristor device having active film of zinc-oxide sandwiched between two silver cross-bar electrodes. It is a unique structure and never been reported in the literature before. The bipolar memristor device demonstrates current bistability as a result of the breakdown of zinc oxide layer into distinct doped and un-doped regions, thus resulting into swift charge transfer. The oxygen vacancies are created in the zinc-oxide layer upon receiving a minimum bias voltage (+ve/−ve) known as forming voltage. The maximum ON/OFF ratio of the current bi-stability for the fabricated memristor was as large as 1 × 103 which is considered satisfactory. The memristor device demonstrated a robust performance of up to 1000 read/write cycles. The printed device was characterized for the structural confirmation using x-ray diffraction analysis and it showed hexagonal wurtzite structure for ZnO active layer and typical face-centred cubic structure for the silver electrodes. The morphological uniformity was confirmed by scanning electron microscopy whereas > 90% transparency was reported by the optical characterization of the zinc-oxide active layer.
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Acknowledgements
This project was funded by the Deanship of Scientific Research (DSR), King Abdulaziz University, Jeddah, under Grant No. (DF-620-135-1441). The authors, therefore, gratefully acknowledge DSR technical and financial support.
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Rafique, A.F., Haji Zaini, J., Bin Esa, M.Z. et al. Printed memory devices using electrohydrodynamic deposition technique. Appl. Phys. A 126, 134 (2020). https://doi.org/10.1007/s00339-020-3307-0
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DOI: https://doi.org/10.1007/s00339-020-3307-0