Abstract
In this research, the significant role of 1,4,5,8-naphthalenetetracarboxylic-dianhydride, NTCDA, thin film on the Al/p-Si barrier under different temperatures is investigated. The structural and topographical properties of the thermally evaporated NTCDA thin film are investigated using a transmission electron microscope, TEM, and atomic force microscope, AFM, respectively, and elucidated that the fabricated films have a smooth nanocrystalline nature with an average crystallite size about 89 nm and average roughness about 3.15 nm. Furthermore, the current–voltage (I–V) characteristics of Al/NTCDA/p-Si/Al device are studied under dark conditions at different temperatures (313–383 K). The Schottky diode electronic parameters such as ideality factor, n, barrier height, ΦB, and reverse saturation current, Is, are calculated at each temperature. A clear increment of ΦB from 0.74 to 0.88 eV accompanied by a clear decrement of n values from 5.83 to 4.99 under increasing temperature (313–383) K is noticed. Due to the inhomogeneity of barrier height, the Gaussian distribution of Schottky barrier height is employed to estimate the mean value of barrier height and standard deviation and found to be 1.5 eV and 20 mV, respectively. The modified Richardson plot is used to estimate the modified Richardson constant and found to be 35.2 A cm−2 K−2 which is close to the known value of p-Si. Moreover, the conduction mechanism in forward and reverse biasing is explained in details. The modified Norde's function is employed for estimating the series resistance, Rs, and barrier height of the fabricated device at each temperature, where the values of Rs showed a decrement behavior from 3.564 to 1.165 kΩ upon increasing the temperature. The process of inserting NTCDA between electrode and p-Si influenced the distribution of interface states for MIS Schottky diode at different temperatures and is explained as a passivation process of the device's interface states.
Similar content being viewed by others
References
M.V. Jacob, Organic semiconductors: past, present and future. Electronics 3, 594–597 (2014)
J.D. Myers, J. Xue, Organic semiconductors and their applications in photovoltaic devices. Polym Rev 52, 1–37 (2012)
V. Coropceanu, H. Li, P. Winget, L. Zhu, J.-L. Bredas, Electronic-structure theory of organic semiconductors: charge-transport parameters and metal/organic interfaces. Ann. Rev. Mater. Res. 43(1), 63–87 (2013)
A. Ahmadiv, B. Gerislioglu, Z. Ramezani, Generation of magnetoelectric photocurrents using toroidal resonances: a new class of infrared plasmonic photodetectors. Nanoscale 11, 13108–13116 (2019)
P. Martyniuk, J. Antoszewski, M. Martyniuk, L. Faraone, A. Rogalski, New concepts in infrared photodetector designs. Appl. Phys. Rev. 1, 041102 (2014)
V. Coropceanu, J. Cornil, D.A. da Silva Filho, Y. Olivier, R. Silbey, J.-L. Brédas, Charge transport in organic semiconductors. Chem. Rev. 107, 926–952 (2007)
C. Groves, Simulating charge transport in organic semiconductors and devices: a review. Rep. Prog. Phys. 80, 026502–026538 (2017)
M. Häming, A. Schöll, E. Umbach, F. Reinert, Adsorbate-substrate charge transfer and electron-hole correlation at adsorbate/metal interfaces. Phys. Rev. B 85, 235132–235144 (2012)
J. Ziroff, S. Hame, M. Kochler, A. Bendounan, A. Schöll, F. Reinert, Low-energy scale excitations in the spectral function of organic monolayer systems. Phys. Rev. B 85, 161404–161408 (2012)
A. Bendounan, F. Forster, A. Schöll, D. Batchelor, J. Ziroff, E. Umbach, F. Reinert, Electronic structure of 1 ML NTCDA/Ag(111) studied by photoemission spectroscopy. Surf. Sci. 601, 4013–4017 (2007)
S.M. Barlow, R. Raval, Complex organic molecules at metal surfaces: bonding, organisationand chirality. Surf. Sci. Rep. 50, 201–341 (2003)
C. Stadler, S. Hansen, A. Schöll, T.-L. Lee, J. Zegenhagen, C. Kumpf, E. Umbach, Molecular distortion of NTCDA upon adsorption on Ag(111): a normal incidence x-ray standing wave study. New J. Phys. 9, 50–58 (2007)
R. Tonner, P. Rosenow, P. Jakob, Molecular structure and vibrations of NTCDA monolayers on Ag(111) from density-functional theory and infrared absorption spectroscopy. Phys. Chem. Chem. Phys. 18, 6316–6328 (2016)
S. Kera, S. Tanaka, H. Yamane, D. Yoshimura, K.K. Okudaira, K. Seki, N. Ueno, Quantitative analysis of photoelectron angular distribution of single-domain organic monolayer film: NTCDA on GeS(001). Chem. Phys. 325, 113–120 (2006)
A.S. Komolov, P.J. Møller, Y.G. Aliaev, E.F. Lazneva, S. Akhremtchik, F.S. Kamounah, J. Mortensen, K. Schaumburg, Organic–organic interfaces and unoccupied electronic states of thin films of perylene and naphthalene derivatives. J. Mol. Struct. 744–747, 145–149 (2005)
H. Tachikawa, H. Kawabata, A density functional theory study on the degradation mechanism of thin film of organic semiconductor by water molecules. Thin Solid Films 516, 3287–3293 (2008)
H. Tachikawa, H. Kawabata, Electronic states of alkali metal-NTCDA complexes: a DFT study. Solid State Sci. 48, 141–146 (2015)
X. Han, F. Yi, T. Sun, J. Sun, Synthesis and electrochemical performance of Li and Ni 1,4,5,8-naphthalenetetracarboxylates as anodes for Li-ion batteries. Electrochem. Commun. 25, 136–139 (2012)
E.R. Triboni, M.F.P. Da Silva, A.T. Finco, M.A. Rodrigues, G.J.-F. Demets, F.H. Dyszy, P.C. Isolani, P.B. Filho, M.J. Politi, Synthesis and properties of new paramagnetic hybrid bayerite from Al(0)/naphthalene dianhydride reaction. Mater. Res. 13(4), 505–511 (2010)
S. Tanida, K. Noda, H. Kawabata, K. Matsushige, N-channel thin-film transistors based on 1,4,5,8-naphthalene tetracarboxylic dianhydride with ultrathin polymer gate buffer layer. Thin Solid Films 518, 571–574 (2009)
W.T. Hammond, J.P. Mudrick, J. Xue, Balancing high gain and bandwidth in multilayer organic photodetectors with tailored carrier blocking layers. J. Appl. Phys. 116, 214501–214508 (2014)
M. Hiramoto, A. Miki, M. Yoshida, M. Yokoyama, Photocurrent multiplication in organic single crystals. Appl. Phys. Lett. 81(8), 1500–1502 (2002)
L. Torsi, A. Dodabalapur, N. Cioffi, L. Sabbatini, P.G. Zambonin, NTCDA organic thin-film-transistor as humidity sensor: weaknesses and strengths. Sens. Actuators B. 77, 7–11 (2001)
H.E. Katz, A.J. Lovinger, J. Johnson, C. Kloc, T. Siegrist, W. Li, Y.-Y. Lin, A.A. Dodabalapur, Soluble and air-stable organic semiconductor with high electron mobility. Nature 404(30), 478–480 (2000)
S.T. Pérez-Merchancano, G.E. Marques, L.E. Bolivar-Marinez, Optical transitions in new trends organic materials. Microelectron. J. 39, 576–578 (2008)
H. Abdel-Khalek, E. Shalaan, M. Abd- El Salam, A.M. El-Sagheer, A.M. El-Mahalawy, Effect of thermal annealing on structural, linear and nonlinear optical properties of 1,4,5,8-naphthalene tetracarboxylic dianhydride thin films. J. Mol. Struct. 1178, 408–419 (2019)
T. Gerbich, H.-C. Schmitt, I. Fischer, J. Petersen, J. Albert, R. Mitrić, A time-resolved study of 1,8-naphthalic anhydride and 1,4,5,8-naphthalene-tetracarboxylic dianhydride. J. Phys. Chem. A. 119(23), 6006–6016 (2015)
C. Falkenberg, C. Uhrich, B. Maennig, M.K. Riede, K. Leo, 1,4,5,8-Naphthalenetetracarboxylic dianhydride as transparent electron transport material in organic p-i-n solar cells. Proc. SPIE. 6999, 69990S-1–69990S-8 (2008).
B.E. Lassiter, G. Wei, S. Wang, J.D. Zimmerman, V.V. Diev, M.E. Thompson, S.R. Forrest, Organic photovoltaics incorporating electron conducting exciton blocking layers. Appl. Phys. Lett. 98, 243307–243309 (2011)
M. Zhu, G. Liang, T. Cui, K. Varahramyan, Depletion-mode n-channel organic field-effect transistors based on NTCDA. Solid-State Electron. 47, 1855–1858 (2003)
L. Torsi, Novel applications of organic based thin film transistors. Microelectron. Reliab. 40, 779–782 (2000)
L. Torsi, A. Dodabalapur, L. Sabbatini, P.G. Zambonin, Multi-parameter gas sensors based on organic thin-film-transistors. Sens. Actuators B. 67, 312–316 (2000)
G. Liang, T. Cui, K. Varahramyan, Electrical characteristics of diodes fabricated with organic semiconductors. Microelectron. Eng. 65, 279–284 (2003)
T. Katsume, M. Hiramoto, M. Yokoyama, Photocurrent multiplication in naphthalene tetracarboxylic anhydride film at room temperature. Appl. Phys. Lett. 69, 3722–3724 (1996)
S.R. Forrest, F.F. So, Organic optoelectronic devices and methods. US patent 5315129 May 24 (1994)
K.-S. Kim, S.-C. Park, J.-G. Nam, M. Hiramoto, Organic photoelectric conversion film, and photoelectric conversion device and image sensor each having the organic photoelectric conversion film. US patent 2009/0294761 A1 (2009)
Y.-M. Koo, O.-K. Song, Spontaneous charge transfer from indium tin oxide to organic molecules for effective hole injection. Appl. Phys. Lett. 94, 153302–153304 (2009)
Z. Jehl, M. Bouttemy, D. Lincot, J.F. Guillemoles, I. Gerard, A. Etcheberry, G. Voorwinden, M. Powalla, N. Naghavi, Insights on the influence of surface roughness on photovoltaic properties of state of the art copper indium gallium diselenide thin films solar cells. J. Appl. Phys. 111, 114509–114515 (2012)
M. Zawodzki, R. Resel, M. Sferrazza, O. Kettner, B. Friedel, Interfacial morphology and effects on device performance of organic bilayer heterojunction solar cells. ACS Appl. Mater. Interfaces 7(30), 16161–16168 (2015)
S.-Y. Lien, Y.-S. Cho, Y. Shao, C.-H. Hsu, C.-C. Tsou, W. Yan, P. Han, D.-S. Wuu, Influence of surface morphology on the effective lifetime and performance of silicon heterojunction solar cell. Int. J. Photoenergy 2015, 1–8 (2015)
D. Benmoussa, B. Meriem, K. Hamid, O.-A. Amaria, Study the effect of surface recombination velocity on performance of solar cells based sige. 4th international conference on automation, control engineering and computer science (ACCS-2017). Proc. Eng. Technol. 19, 78–81 (2017)
P. Zhang, Effects of surface roughness on electrical contact, RF heating and field enhancement. Ph.D. Dissertation, The University of Michigan, USA (2012)
O.S. Cifci, M. Bakir, J.L. Meyer, A. Kocyigit, Morphological and electrical properties of ATSP/p-Si photodiode. Mat. Sci. Semicond. Proc. 74, 175–182 (2018)
J. Zhou, J. Huang, Photodetectors based on organic–inorganic hybrid lead halide perovskites. Adv. Sci. 5, 1700256–1700279 (2018)
M.M. Makhlouf, M.M. El-Nahass, M.H. Zeyada, Fabrication, temperature dependent current-voltage characteristics and photoresponse properties of Au/α-PbO2/p-Si/Al heterojunction photodiode. Mat. Sci. Semicond. Proc. 58, 68–75 (2017)
K.V. Chizh, V.A. Chapnin, V.P. Kalinushkin, V.Y. Resnik, M.S. Storozhevykh, V.A. Yuryev, Metal silicide/poly-Si Schottky diodes for uncooled microbolometers. Nanosc. Res. Lett. 8, 177 (2013)
A.G. Imer, Y.S. Ocak, Effect of light intensity and temperature on the current voltage characteristics of Al/SY/p-Si organic–inorganic heterojunction. J. Electron. Mater. 45(10), 5347–5355 (2016)
J. Lee, T. Uhrmann, T. Dimopoulos, H. Bruckl, J. Fidler, TEM study on diffusion process of NiFe Schottky and MgO/NiFe tunneling diodes for spin injection in silicon. IEEE Trans. Magn. 46, 2067–2069 (2010)
A. Tataroğlu, F.Z. Pür, The Richardson constant and barrier inhomogeneity at Au/Si3N4/n-Si (MIS) Schottky diodes. PhysicaScripta 88, 15801–15806 (2013)
Z. Yuan, A photodiode with high rectification ratio and low turn-on voltage based on ZnO nanoparticles and SubPc planar heterojunction. Phys. E 56, 160–164 (2014)
N.P. Maity, R. Maity, R.K. Thapa, S. Baishya, Image force effect on tunneling current for ultrathin high-K dielectric material Al2O3 based metal oxide semiconductor devices. J. Nanoelectron. Optoelectron. 10, 645–648 (2015)
M.A. Mayimele, J.P.J. Van Rensburg, F.D. Auret, M. Diale, Analysis of temperature dependant current-voltage characteristics and extraction of series resistance in Pd/ ZnO Schottky barrier diodes. Phys. B Condens. Matter. 480, 58–62 (2016)
H.M. Zeyada, M.M. El-Nahass, M.M. El-Shabaan, Photovoltaic properties of the 4H-pyrano[3,2-c]quinoline derivatives and their applications in organic–inorganic photodiode fabrication. Synth. Methods 220, 102–113 (2016)
H. Abdel-Khalek, E. Shalaan, M. Abd-El Salam, A. M. El-Mahalawy, Effect of illumination intensity on the characteristics of Cu(acac)2/n-Si photodiode. Synth. Methods 245, 223–236 (2018).
S. Mahato, D. Biswas, L.G. Gerling, C. Voz, J. Puigdollers, Analysis of temperature dependent current–voltage and capacitance–voltage characteristics of an Au/V2O5/n-Si Schottky diode. AIP Adv. 7, 085313 (2017)
D. Zhu, J. Xu, A.N. Noemaun, J.K. Kim, E.F. Schubert, M.H. Crawford, D.D. Koleske, The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes. Appl. Phys. Lett 94, 081113 (2009)
S. Mahato, Composition analysis of two different PEDOT:PSS commercial products used as an interface layer in Au/n-Si Schottky diode. RSC Adv. 7, 47125–47131 (2017)
R.K. Gupta, K. Ghosh, P.K. Kahol, Fabrication and electrical characterization of Au/p-Si/STO/Au contact. Curr. Appl. Phys. 9, 933–936 (2009)
J. Osvald, Temperature dependence of barrier height parameters of inhomogeneous Schottky diodes. Microelectron. Eng. 86, 117–120 (2009)
A. Tombak, Y.S. Ocak, S. Asubay, T. Kilicoglu, F. Ozkahraman, Fabrication and electrical properties of an organic-inorganic device based on Coumarin 30 dye. Mat. Sci. Semicond. Proc. 24, 187–192 (2014)
I. Hussain, M.Y. Soomro, N. Bano, O. Nur, M. Willander, Systematic study of interface trap and barrier inhomogeneities using I-V-T characteristics of Au/ZnOnanorods Schottky diode. J. Appl. Phys. 113, 234509–234515 (2013)
T. Tunç, Ş. Altindal, İ. Uslu, İ. Dӧkme, H. Uslu, Temperature dependence current-voltage (I–V) characteristics of Au/n-S (111) Schottky barrier diodes with PVA (Ni, Zn-doped) interfacial layer. Mat. Sci. Semicond. Proc. 14, 139–145 (2011)
R.D. Gould, The interpretation of space-charge-limited currents in semiconductors and insulators. J. Appl. Phys. 53(4), 3353–3355 (1982)
N.F. Mott, R.W. Gurney, Electronic Processes in Ionic Crystals (Oxford University Press, London, 1940)
H.S. Soliman, A.A.M. Farag, N.M. Khosifan, T.S. Solami, Electronic and photovoltaic properties of Au/pyronine G(Y)/p-GaAs/Au: Zn heterojunction. J. Alloys Compd. 530, 157–163 (2012)
M.M. El-Nahass, H.S. Metwally, H.E.A. El-Sayed, A.M. Hassanien, Electrical and photovoltaic properties of FeTPPCl/p-Si heterojunction. Synth. Methods 161, 2253–2258 (2011)
H.M. Zeyada, M.M. El-Nahass, E.M. El-Menyawy, A.S. El-Sawah, Electrical and photovoltaic characteristics of indium phthalocyanine chloride/p-Si solar cell. Synth. Methods 207, 46–53 (2015)
H.A. Afify, M.M. El-Nahass, A.-S. Gadallah, M.A. Khedr, Carrier transport mechanisms and photodetector characteristics of Ag/TiOPc/p-Si/Al hybrid heterojunction. Mat. Sci. Semicond. Proc. 39, 324–331 (2015)
M.A. Lampert, Volume-controlled current injection in insulators. Rep. Prog. Phys. 27, 329–367 (1964)
M.A. Lampert, Simplified theory of space-charge-limited currents in an insulator with traps. Phys. Rev. 103, 1648–1656 (1956)
I.S. Yahia, G.B. Sakr, T. Wojtowicz, G. Karczewski, p-ZnTe/n-CdMnTe/n-GaAs diluted magnetic diode for photovoltaic applications. Semicond. Sci. Technol. 25, 095001–095008 (2010). https://doi.org/10.1088/0268-1242/25/9/095001
P.K. Nayak, N. Periasamy, Calculation of electron affinity, ionization potential, transport gap, optical band gap and exciton binding energy of organic solids using 'solvation’ model and DFT. Org. Electron. 10, 1396–1400 (2009)
C.H. Kim, O. Yaghmazadeh, Y. Bonnassieux, G. Horowitz, Modeling the low-voltage regime of organic diodes: origin of the ideality factor. J. Appl. Phys. 110, 093722 (2011)
S.R. Forrest, Organic–inorganic semiconductor devices and 3,4,9,10 perylenetetracarboxylicdianhydride: an early history of organic electronics. J. Phys. Condens. Matter 15, S2599–S2610 (2003)
P. Pipinys, V. Lapeika, Analysis of reverse-bias leakage current mechanisms in metal/GaN Schottky diodes. Adv. Condens. Matter Phys. (2010). https://doi.org/10.1155/2010/526929
H.M. Zeyada, M.I. Youssif, N.A. El-Ghamaz, M.A. Nasher, Carrier transport mechanisms and photovoltaic characteristics of Au/ toluidine blue/n-Si/Al heterojunction solar cell. J. Mater. Sci. Mater. Electron. 29, 3592–3601 (2018)
A.M. Nawar, M.M. Makhlouf, Au-nanoparticles doped SiO2 interfacial layer to promote the photovoltaic characteristics of Au/p-Si/Al solar cells. J. Alloys Compd. 767, 1271–1281 (2018)
V. Aubry, F. Meyer, Schottky diodes with high series resistance: limitations of forward I–V methods. J. Appl. Phys. 76, 7973–7984 (1994)
H. Norde, A modified forward I–V plot for Schottky diodes with high series resistance. J. Appl. Phys. 50, 5052–5053 (1979)
K. Sato, Y. Yasumura, Study of forward I–V plot for Schottky diodes with high series resistance. J. Appl. Phys. 58, 3655–3657 (1985)
A.M. Cowley, S.M. Sze, Surface states and barrier height of metal-semiconductor systems. J. Appl. Phys. 36, 3212 (1965)
B. Boyarbay, H. Çetin, A. Uygun, E. Ayyildiz, Electrical characterization and fabrication of organic/inorganic semiconductor heterojunctions. Appl. Phys. A 103, 89–96 (2011)
A. Ugur, A.G. Imer, Y.S. Ocak, Electrical and photoelectrical characterization of an organic–inorganic heterojunction based on quinolone yellow dye. Mat. Sci. Semicond. Proc. 39, 569–574 (2015)
E. Elgazzar, A. Tataroğlu, A.A. Al-Ghamdi, Y. Al-Turki, W.A. Farooq, F. El-Tantawy, F. Yakuphanoglu, Thermal sensors based on delafossite film/p-silicon diode for low-temperature measurements. Appl. Phys. A 122, 617–625 (2016)
K. Akkılıç, Y.S. Ocak, T. Kılıçoğlu, S. İlhan, H. Temel, Calculation of current-voltage characteristics of a Cu (II) complex/n-Si/AuSb Schottky diode. Curr. Appl. Phys. 10, 337–341 (2010)
L. Dasaradha Rao, N. Ramesha Reddy, A. Ashok Kumar, V. Rajagopal Reddy, Temperature dependent electrical properties of rare-earth metal Er Schottky contact on p-type InP. AIP Conf. Proc. 1536, 471–472 (2013)
S. Sankar Naik, V. Rajagopal Reddy, Temperature dependency and current transport mechanisms of Pd/V/n-type InPschottky rectifiers. Adv. Mat. Lett. 3(3), 188–196 (2012)
S. Avasthi, Y. Qi, G.K. Vertelov, J. Schwartz, A. Kahn, J.C. Sturm, Silicon surface passivation by an organic overlayer of 9,10-phenanthrenequinone. Appl. Phys. Lett. 96, 222109 (2010)
A. Vilan, D. Cahen, Chemical modification of semiconductor surfaces for molecular electronics. Chem. Rev. 117, 4624–4666 (2017)
S.M. Sze, Physics of Semiconductors Devices (Wiely, New York, 1969)
P.K. Nayak, N. Periasamy, Calculation of electron affinity, ionization potential, transport gap, optical band gap and exciton binding energy of organic solids using solvation model and DFT. Org Electron 10, 1396–1400 (2009)
A. Nollau, M. Pfeiffer, T. Fritz, K. Leo, Controlled n-type doping of a molecular organic semiconductor: naphthalenetetracarboxtlic dianhydride (NTCDA) doped with bis (ethylenedithio)-tetrathiafulvalene (BEDT-TTF). J. Appl. Phys. 87, 4340 (2000)
D. Somvanshi, S. Jit, Analysis of temperature-dependent electrical characteristics of n-ZnO nanowires (NWs)/p-Si heterojunction diodes. IEEE Trans. Nanotechnol. 13(1), 62–69 (2014)
Acknowledgements
The authors kindly thank Prof. Hefny Abd-El Khalek, Professor of Solid State Physics, Physics Department, Faculty of Science, Suez Canal University for his helpful discussion.
Funding
This research did not receive any specific Grant from funding agencies in the public, commercial, or not-for-profit sectors.
Author information
Authors and Affiliations
Corresponding author
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Nawar, A.M., Abd-Elsalam, M., El-Mahalawy, A.M. et al. Analyzed electrical performance and induced interface passivation of fabricated Al/NTCDA/p-Si MIS–Schottky heterojunction. Appl. Phys. A 126, 113 (2020). https://doi.org/10.1007/s00339-020-3289-y
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s00339-020-3289-y