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Strain distributions in the InAlN barrier layers of In0.17Al0.83N/GaN heterostructure field-effect transistors

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Abstract

Using measured gate-source capacitance–voltage (C–V) curves and forward current–voltage (I–V) curves for In0.17Al0.83N/GaN heterostructure field-effect transistors (HFETs) of various gate lengths with normal-Ohmic contacts and side-Ohmic contacts, the strain distributions in the InAlN barrier layers are analyzed. It is found that the compressive strain in the InAlN barrier layer is nearly uniformly distributed between source and drain contacts for devices with side-Ohmic contact processing while it is enhanced and monotonously decreased from the middle to the source/drain contact for devices with normal-Ohmic contact processing. This difference in the strain distributions is attributed to the difference in the lateral diffusing of Ohmic contact metal atoms into the InAlN barrier layer during the different Ohmic contact processing.

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Acknowledgements

This work was supported by National Key R&D Program of China (Grant No. 2017YFB0403100, 2017YFB0403103) and Science Challenge Project (Grant No. TZ2018003).

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Authors and Affiliations

  1. Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, 610200, China

    Yang Zhou, Zhe Xu & Juntao Li

  2. Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang, 621900, China

    Yang Zhou, Zhe Xu & Juntao Li

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  1. Yang Zhou
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  2. Zhe Xu
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Correspondence to Yang Zhou.

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Zhou, Y., Xu, Z. & Li, J. Strain distributions in the InAlN barrier layers of In0.17Al0.83N/GaN heterostructure field-effect transistors. Appl. Phys. A 125, 881 (2019). https://doi.org/10.1007/s00339-019-3172-x

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  • DOI: https://doi.org/10.1007/s00339-019-3172-x

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