Abstract
Quantum confined germanium (Ge) nanocrystals were synthesized by a thermal annealing of germanium oxide thin films fabricated by an e-beam evaporation method. The nanocrystal formation, structure, and sizes upon annealing are evaluated by a combination of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy studies. Spherical nanocrystals with sizes of around 3 nm and having both diamond and tetragonal phases are formed for an annealing temperature of 500 °C. The thermally induced transformation and phase separation of amorphous germanium oxide to nanocrystalline Ge is discussed using X-ray photoelectron spectroscopy. The bandgap agrees with the calculated values using effective mass approximation. The visible photoluminescence is investigated as a function of the annealing temperature. This disproportionation mechanism of germanium oxide films showing favorable optical properties suggests its scope for forming quantum confined Ge nanocrystals embedded in its amorphous matrix relevant for both electronic and optoelectronic applications.
Similar content being viewed by others
References
Y. Maeda, Visible photoluminescence from nanocrystallite Ge embedded in a glassy SiO2 matrix: evidence in support of the quantum-confinement mechanism. Phys. Rev. B 51, 1658 (1995)
Y. Maeda, N. Tsukamoto, Y. Yazawa, Y. Kanemitsu, Y. Masumoto, Visible photoluminescence of Ge microcrystals embedded in SiO2 glassy matrices. Appl. Phys. Lett. 59, 3168 (1991). https://doi.org/10.1063/1.105773
Y. Kanemitsu, H. Uto, Y. Masumoto, Y. Maeda, On the origin of visible photoluminescence in nanometer-size Ge crystallites. Appl. Phys. Lett. 61, 2187 (1992). https://doi.org/10.1063/1.108290
S. Guha, M.D. Pace, D.N. Dunn, I.L. Singer, Visible light emission from Si nanocrystals grown by ion implantation and subsequent annealing. Appl. Phys. Lett. 70, 1207 (1997). https://doi.org/10.1063/1.118275
L. Yue, Y. He, Studies on room temperature characteristics and mechanism of visible luminescence of Ge-SiO2 thin films. J. Appl. Phys. 81, 2910 (1997). https://doi.org/10.1063/1.363963
H. Ryo, Y. Masaki, T. Keiji, K. Kenji, O. Yukio, N. Hiroyuki, Preparation and properties of Ge microcrystals embedded in SiO2 glass films. Jpn. J. Appl. Phys. 29, 756 (1990)
A.V. Kolobov, S.Q. Wei, W.S. Yan, H. Oyanagi, Y. Maeda, K. Tanaka, Formation of Ge nanocrystals embedded in a SiO2 matrix Transmission electron microscopy, X-ray absorption, and optical studies. Phys. Rev. B 67, 195314 (2003)
S.K. Ray, K. Das, Luminescence characteristics of Ge nanocrystals embedded in SiO2 matrix. Opt. Mater. 27, 948 (2005)
H. Yang, X. Yao, X. Wang et al., Sol–gel preparation and photoluminescence of size controlled germanium nanoparticles embedded in a SiO2 matrix. J. Phys. Chem. B 107, 13319 (2003)
A. Singha, A. Roy, D. Kabiraj, D. Kanjilal, A hybrid model for the origin of photoluminescence from Ge nanocrystals in a SiO2 matrix. Semicond. Sci. Technol. 21, 1691 (2006)
N.N. Ovsyuk, E.B. Gorokhov, V.V. Grishchenko, A.P. Shebanin, Low-frequency Raman scattering by small semiconductor particles. JETP Lett. 47, 298 (1988)
V.A. Volodin, D.V. Marin, H. Rinnert, M. Vergnat, Formation of Ge and GeSi nanocrystals in GeOx/SiO2 multilayers. J. Phys. D Appl. Phys. 46, 275305 (2013)
E.B. Gorokhov, V.A. Volodin, D.V. Marin et al., Effect of quantum confinement on optical properties of Ge nanocrystals in GeO2 films. Semiconductors 39, 1168 (2005)
M. Ardyanian, H. Rinnert, X. Devaux, M. Vergnat, Structure and photoluminescence properties of evaporated GeOx thin films. Appl. Phys. Lett. 89, 011902 (2006). https://doi.org/10.1063/1.2218830
V.A. Volodin, E.B. Gorokhov, M.D. Efremov, D.V. Marin, D.A. Orekhov, Photoluminescence of GeO2 films containing germanium nanocrystals. J. Exp. Theor. Phys. Lett. 77, 411 (2003)
J. Wu, Y. Sun, R. Zou et al., One-step aqueous solution synthesis of Ge nanocrystals from GeO2 powders. CrystEngComm 13, 3674 (2011). https://doi.org/10.1039/C1CE05191A
C.J. Sahle, C. Sternemann, H. Conrad et al., Phase separation and nanocrystal formation in GeO. Appl. Phys. Lett. 95, 021910 (2009). https://doi.org/10.1063/1.3183581
S.K. Wang, H.-G. Liu, A. Toriumi, Kinetic study of GeO disproportionation into a GeO2/Ge system using X-ray photoelectron spectroscopy. Appl. Phys. Lett. 101, 061907 (2012). https://doi.org/10.1063/1.4738892
K. Vijayarangamuthu, S. Rath, D. Kabiraj et al., Ge nanocrystals embedded in a GeOx matrix formed by thermally annealing of Ge oxide film. J. Vac. Sci. Technol. A Vac. Surf. Films 27, 731 (2009). https://doi.org/10.1116/1.3155402
S. Rath, D. Kabiraj, D.K. Avasthi et al., Evidence of nanostructure formation in Ge oxide by crystallization induced by swift heavy ion irradiation. Nucl. Instrum. Methods Phys. Res. Sect. B 263, 419 (2007). https://doi.org/10.1016/j.nimb.2007.07.018
K. Vijayarangamuthu, C. Singh, D. Kabiraj, S. Rath, A spectroscopic ellispometric study of the tunability of the optical constants and thickness of GeOx films with swift heavy ions. J. Appl. Phys. 110, 063512 (2011). https://doi.org/10.1063/1.3638700
P. Stampfli, K.H. Bennemann, Theory for the instability of the diamond structure of Si, Ge, and C induced by a dense electron-hole plasma. Phys. Rev. B 42, 7163 (1990)
D. Schmeisser, R.D. Schnell, A. Bogen et al., Surface oxidation states of germanium. Surf. Sci. 172, 455 (1986). https://doi.org/10.1016/0039-6028(86)90767-3
A. Molle, M.N.K. Bhuiyan, G. Tallarida, M. Fanciulli, In situ chemical and structural investigations of the oxidation of Ge(001) substrates by atomic oxygen. Appl. Phys. Lett. 89, 083504 (2006). https://doi.org/10.1063/1.2337543
K. Prabhakaran, T. Ogino, Oxidation of Ge (100) and Ge(111) surfaces: an UPS and XPS study. Surf. Sci. 325, 263 (1995). https://doi.org/10.1016/0039-6028(94)00746-2
V. Kapaklis, C. Politis, P. Poulopoulos, P. Schweiss, Photoluminescence from silicon nanoparticles prepared from bulk amorphous silicon monoxide by the disproportionation reaction. Appl. Phys. Lett. 87, 123114 (2005). https://doi.org/10.1063/1.2043246
W. Zhang, S. Zhang, Y. Liu, T. Chen, Evolution of Si suboxides into Si nanocrystals during rapid thermal annealing as revealed by XPS and Raman studies. J. Cryst. Growth 311, 1296 (2009). https://doi.org/10.1016/j.jcrysgro.2008.12.038
L. Skuja, K. Kajihara, J. Grube, H. Hosono (2014) Luminescence of non-bridging oxygen hole centers in crystalline SiO2. AIP Conf. Proc. 1624, 130. https://doi.org/10.1063/1.4900468
L. Armelao, F. Heigl, P.-S.G. Kim, R.A. Rosenberg, T.Z. Regier, T.-K. Sham, Visible emission from GeO2 nanowires: site-specific insights via X-ray excited optical luminescence. J. Phys. Chem. C 116, 14163 (2012). https://doi.org/10.1021/jp3040743
Acknowledgements
K.V acknowledges Department of Science and Technology, India for the DST-Inspire Faculty Award (DST/INSPIRE/04/2015/002060). We acknowledge CIF, University of Delhi for characterization facilities.
Author information
Authors and Affiliations
Corresponding authors
Rights and permissions
About this article
Cite this article
Kalimuthu, V., Kumar, P., Kumar, M. et al. Growth mechanism and optical properties of Ge nanocrystals embedded in a GeOx matrix. Appl. Phys. A 124, 712 (2018). https://doi.org/10.1007/s00339-018-2134-z
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s00339-018-2134-z