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Structural, topological, electrical and luminescence properties of CZ-silicon (CZ-Si) irradiated by neutrons

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Abstract

In this paper, the changes in the XRD, Raman, AFM, the substrate resistivity and Photoluminescence of the p-type CZ-silicon samples are studied before and after the high fluences of 1 MeV equivalent neutrons. After irradiation, the samples are annealed at different temperatures in Ar atmosphere. It was found that the lattice parameter increases with increase of neutron fluence, related to the increment of the defect content. Also, the increasing of the crystallinity was caused by the fluence and the annealing temperature. It was found that the roughness increases with the increase of the neutron fluence and decreases with increasing of the annealing temperature and assigned to the degree of material smoothing. The electrical studies show that, with high annealing temperature, the lowest value of the resistivity was experimentally observed with the increase of the neutron irradiation. Therefore, the phosphorus and lithium atoms could be useful as a donor in CZ-Si. It was shown that increasing of the neutron fluence, the PL intensity decreases with decreasing of oxygen defects in SiOx.

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Acknowledgements

One of authors wishes to thank: A. Sari from CRNB, for XRD analysis, M. Moughari from CRNB, for annealing assistance and A. Cheriet from CRTSE for fruitful discussion.

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Authors and Affiliations

  1. Nuclear Research Center of Birine, BP 180, Ain Oussera, 17200, Djelfa, Algeria

    Nadjet Osmani

  2. Department of Physics, Faculty of Science, University of Setif, Sétif, Algeria

    Nadjet Osmani & A. Boucenna

  3. Laser Department, Nuclear Research Center of Algiers CRNA, 02 Bd. Frantz Fanon, BP 399, Alger, Algeria

    L. Guerbous

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  1. Nadjet Osmani
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  3. A. Boucenna
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Correspondence to Nadjet Osmani.

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Osmani, N., Guerbous, L. & Boucenna, A. Structural, topological, electrical and luminescence properties of CZ-silicon (CZ-Si) irradiated by neutrons. Appl. Phys. A 124, 709 (2018). https://doi.org/10.1007/s00339-018-2128-x

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  • DOI: https://doi.org/10.1007/s00339-018-2128-x

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