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Phonon replicas of type-II GaSb/GaAs quantum dot structure grown by liquid phase epitaxy

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Abstract

Type-II GaSb/GaAs quantum dot (QD) structures have attracted a great deal of attention owing to their unique optical and electrical properties associated with type-II band alignment. In this study, GaSb QDs were grown on GaAs substrates using liquid phase epitaxy (LPE) technique. The morphology of the obtained QDs was studied by scanning electron microscope and atom force microscope. The optical properties of the QDs were investigated by photoluminescence (PL) spectra. Strong first- and second-order longitudinal optical-phonon replicas were observed on the low-energy side of the wetting layer peak in the PL spectra.

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Acknowledgements

The authors wish to thank Dr. Yingfei Lv for the suggestion in the process of LPE growth and Dr. Xiren Chen for the suggestion in the process of PL spectra measurement. This work was funded by Chinese Ministry of Science and Technology (2016YFA0202201), NSFC (61376016, 61290304, 11574335), and Youth Innovation Promotion Association CAS (KSZD-EW-Z-018).

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Authors and Affiliations

  1. State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People’s Republic of China

    Yang Wang, Shuhong Hu, Hao Xie, Yan Sun, Chao Wang & Ning Dai

  2. University of Chinese Academy of Sciences, Beijing, 100049, People’s Republic of China

    Yang Wang, Hao Xie & Chao Wang

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  1. Yang Wang
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  2. Shuhong Hu
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  3. Hao Xie
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  4. Yan Sun
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  5. Chao Wang
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  6. Ning Dai
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Correspondence to Shuhong Hu or Ning Dai.

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Wang, Y., Hu, S., Xie, H. et al. Phonon replicas of type-II GaSb/GaAs quantum dot structure grown by liquid phase epitaxy. Appl. Phys. A 124, 700 (2018). https://doi.org/10.1007/s00339-018-2105-4

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