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1 Publisher Correction to: Applied Physics A (2018) 124:619 https://doi.org/10.1007/s00339-018-1958-x
Dear readers,
Unfortunately, the original version of this article did not correctly reflect the change of authorship.
The corresponding author of this article is Prof. Zhiyong Wang, E-Mail: zywang_bjut@126.com.
Please excuse this mistake.
The original article was corrected.
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Yao, S., Lan, T., Zhou, G. et al. Publisher Correction to: Effect of strain modification on crystallinity and luminescence of InGaN/GaN multiple quantum wells grown by MOCVD. Appl. Phys. A 124, 679 (2018). https://doi.org/10.1007/s00339-018-2103-6
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DOI: https://doi.org/10.1007/s00339-018-2103-6