Skip to main content
SpringerLink
Log in

Synthesis, structures and electroluminescence properties of CdS:In/Si nanoheterostructure array

  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

An In-doped CdS/Si nanoheterojunction (CdS:In/Si-NPA) is prepared by depositing an In-doped CdS thin film onto a Si nanoporous pillar array (Si-NPA) via a successive ionic layer adsorption and reaction method. Based on the measured J–V characteristic curve, the nanoheterojunction exhibits a good rectifying behavior with a low forward turn-on voltage (2.2 V), a small leakage current density (0.5 mA/cm2 at − 3 V) and a high reverse breakdown voltage (> 8 V). The electroluminescence (EL) measurements reveal that a broadband emerges between 400 and 700 nm, and this band is confirmed as a white light emission based on the value of the chromaticity coordinate. The EL properties, including the CIE chromaticity coordinates, Colour Rendering Index and correlated color temperature, can be tuned by the applied voltage. The generation mechanism of the EL can be well interpreted depending on the energy band structure of CdS:In/Si-NPA. The green band should be attributed to the band-edge emission of CdS and the yellow emission may be related to Cd interstitial. These results highlight the potential of CdS:In/Si-NPA as a light source for future white light emitting devices.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4

Similar content being viewed by others

References

  1. Y.F. Chan, W. Su, C.X. Zhang, Z.L. Wu, Y. Tang, X.Q. Sun, H.J. Xu, Electroluminescence from ZnO-nanofilm/Si-micropillar heterostructure arrays. Opt. Express 20, 24280 (2012)

    Article  ADS  Google Scholar 

  2. D. Wu, Y. Jiang, S. Li, F. Li, J. Li, X. Lan, Y. Zhang, C. Wu, L. Luo, J. Jie, Construction of high-quality CdS: Ga nanoribbon/silicon heterojunctions and their nano-optoelectronic applications. Nanotechnology 22, 405201 (2011)

    Article  Google Scholar 

  3. Y. Ye, B. Yu, Z. Gao, H. Meng, H. Zhang, L. Dai, G. Qin, Two-dimensional CdS nanosheet-based TFT and LED nanodevices. Nanotechnology 23, 194004 (2012)

    Article  ADS  Google Scholar 

  4. B. Das, S.P. McGinnis, Porous silicon pn junction light emitting diodes. Semicond. Sci. Technol. 14, 988 (1999)

    Article  ADS  Google Scholar 

  5. C.H. Cheng, Y.C. Lien, C.L. Wu, G.R. Lin, Mutlicolor electroluminescent Si quantum dots embedded in SiOx thin film MOSLED with 2.4% external quantum efficiency. Opt. Express 21, 391 (2013)

    Article  ADS  Google Scholar 

  6. O. Hayden, A.B. Greytak, D.C. Bell, Core-shell nanowire light-emitting diodes. Adv. Mater. 17, 701 (2005)

    Article  Google Scholar 

  7. H.J. Xu, X.J. Li, Silicon nanoporous pillar array: a silicon hierarchical structure with high light absorption and triple-band photoluminescence. Opt. Express 16, 2933 (2008)

    Article  ADS  Google Scholar 

  8. A. Rubel, J. Podder, Structural and electrical transport properties of CdS and Al-doped CdS thin films deposited by spray pyrolysis. J. Sci. Res. 419, 121 (2012)

    Google Scholar 

  9. J.S. Cruz, R.C. Pérez, G.T. Delgado, O.Z. Angel, CdS thin films doped with metal-organic salts using chemical bath deposition. Thin Solid Films 518, 1791 (2010)

    Article  ADS  Google Scholar 

  10. L.L. Yan, X.B. Wang, X.J. Cai, X.J. Li, Effect of boron-doping on the luminescent and electrical properties of a CdS/Si heterostructure based on Si nanoporous pillar array. J. Alloy. Compd. 632, 450 (2015)

    Article  Google Scholar 

  11. S. Butt, N.A. Shah, A. Nazir, Z. Ali, A. Maqsood, Influence of film thickness and In-doping on physical properties of CdS thin films. J. Alloy. Compd. 587, 582 (2014)

    Article  Google Scholar 

  12. V.K. Singh, P. Chauhan, S.K. Mishra, R.K. Srivastava, Effect of indium doping and annealing on photoconducting property of wurtzite type CdS. Electron. Mater. Lett. 8, 295 (2012)

    Article  ADS  Google Scholar 

  13. J. Lee, Raman scattering and photoluminescence analysis of B-doped CdS thin films. Thin Solid Films 451–452, 170 (2004)

    Article  Google Scholar 

  14. A.L. Patterson, The Scherrer formula for X-Ray particle size determination. Phys. Rev. 56, 978 (1939)

    Article  ADS  MATH  Google Scholar 

  15. K. Ravichandran, V. Senthamilselvi, Effect of indium doping level on certain physical properties of CdS films deposited using an improved SILAR technique. Appl. Surf. Sci. 270, 439 (2013)

    Article  ADS  Google Scholar 

  16. A.M. Abdulkarem, E.M. Elssfah, N.N. Yan, G. Demissie, Y. Yu, Photocatalytic activity enhancement of CdS through In doping by simple hydrothermal method. J. Phys. Chem. Solids 74, 647 (2013)

    Article  ADS  Google Scholar 

  17. L.L. Yan, X.B. Wang, W.K. Liu, X.J. Li, Effect of boron doping on the rectification effect and photovoltaic performance of CdS/Si heterostructure based on Si nanoporous pillar array. J. Phys. D 48, 265101 (2015)

    Article  ADS  Google Scholar 

  18. L.L. Yan, Y.T. Li, C.X. Hu, X.J. Li, Temperature-dependent photoluminescence and mechanism of CdS thin film grown on Si nanoporous pillar array. Appl. Surf. Sci. 349, 219 (2015)

    Article  Google Scholar 

  19. K. Ravichandran, P. Philominathan, Comparative study on structural and optical properties of CdS films fabricated by three different low-cost techniques. Appl. Surf. Sci. 255, 5736 (2009)

    Article  ADS  Google Scholar 

  20. L.L. Yan, H.X. Cai, L. Chen, X.J. Li, Effect of boron-doping on the electroluminescence properties of CdS/Si heterostructure based on Si nanoporous pillar array. Mater. Lett. 181, 113 (2016)

    Article  Google Scholar 

  21. K.Q. Peng, X. Wang, L. Li, Y. Hu, S.-T. Lee, Silicon nanowires for advanced energy conversion and storage. Nano Today 8, 75 (2013)

    Article  Google Scholar 

  22. Z. Fan, D.J. Ruebusch, A.A. Rathore, R. Kapadia, O. Ergen, P.W. Leu, A. Javey, Challenges and prospects of nanopillar-based solar cells. Nano Res. 2, 829 (2009)

    Article  Google Scholar 

  23. H.J. Xu, X.J. Li, Rectification effect and electron transport property of CdS/Si nanoheterostructure based on silicon nanoporous pillar array. Appl. Phys. Lett. 93, 172105 (2008)

    Article  ADS  Google Scholar 

  24. C. He, C.B. Han, Y.R. Xu, X.J. Li, Photovoltaic effect of CdS/Si nanoheterojunction array. J. Appl. Phys. 110, 094316 (2011)

    Article  ADS  Google Scholar 

  25. A. Narayanaswamy, L.F. Feiner, P.J. Van Der Zaag, Temperature dependence of the photoluminescence of InP/ZnS quantum dots. J. Phys. Chem. C 112, 6775 (2008)

    Article  Google Scholar 

  26. A.E. Abken, D. Halliday, K. Durose, Photoluminescence study of polycrystalline photovoltaic CdS thin film layers grown by close-spaced sublimation and chemical bath deposition. J. Appl. Phys. 105, 064515 (2009)

    Article  ADS  Google Scholar 

  27. S. Butt, N.A. Shah, A. Nazir, Z. Ali, A. Maqsood, Influence of film thickness and In-doping on physical properties of CdS thin films. J. Alloy. Compd. 587, 582 (2013)

    Article  Google Scholar 

  28. C.B. Han, C. He, X.J. Li, Near-infrared light emission from a GaN/Si nanoheterostructure array. Adv. Mater. 23, 4811 (2011)

    Article  Google Scholar 

Download references

Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant No. 61705062 and 21601050), the Research Project for Basic and Forefront Technology of Henan Province (Grant No. 162300410219), The Excellent Youth Foundation of Henan Polytechnic University (Grant No. J2017-4), The Youth Backbone Teachers of Henan Polytechnic University (Grant No. QG2016-197), and the Henan Polytechnic University Foundation for Doctor Teachers (Grant No. B2016-46).

Author information

Authors and Affiliations

  1. School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo, 454000, People’s Republic of China

    Ling Ling Yan, Hong Xin Cai & Liang Chen

Authors
  1. Ling Ling Yan
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Hong Xin Cai
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Liang Chen
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Hong Xin Cai.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Yan, L.L., Cai, H.X. & Chen, L. Synthesis, structures and electroluminescence properties of CdS:In/Si nanoheterostructure array. Appl. Phys. A 123, 658 (2017). https://doi.org/10.1007/s00339-017-1270-1

Download citation

  • Received:

  • Accepted:

  • Published:

  • DOI: https://doi.org/10.1007/s00339-017-1270-1

Search

Navigation