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Synthesis of a high-quality Al-doped CdS/Si nanoheterojunction array and characterization of its electrical and electroluminescence properties

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Abstract

A high-quality nanoheterojunction composed of p-type Si nanoporous pillar array (Si-NPA) and n-type CdS:Al was successfully constructed by growing Al-doped CdS film on a silicon nanoporous pillar array via a simple chemical bath deposition method. The fabricated CdS:Al/Si-NPA nanoheterojunction exhibits a pronounced rectification behavior at a low turn-on voltage of ~ 0.5 V, a relatively high rectification ratio of 217 at ± 1.5 V, and good ideality factors of 0.85 in the low-voltage region and 2.45 in a high-voltage region. The electroluminescence spectra of a nanolight-emitting diode based on the nanoheterojunction are dominated by an intense band-edge emission located at ~ 520 nm under a small forward voltage and free from defect emissions. The intensity increased rapidly with the forward voltage. The emission mechanism and CIE chromaticity coordinates of the electroluminescence spectra were also discussed. The obtained CdS:Al/Si-NPA nanoheterojunction could be used for important applications in nanoscale optoelectronic devices.

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Acknowledgements

This work was funded by the National Natural Science Foundation of China (61705062), the Research Project for Basic and Forefront Technology of Henan Province (162300410219), the excellent youth foundation of Henan Polytechnic University (J2017-4), the Youth backbone teachers of Henan Polytechnic University (QG2016-197), the Fundamental Research Funds for the Universities of Henan Province (NSFRF180331) and the Henan Polytechnic University Foundation for Doctor Teachers (B2016-46).

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  1. School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo, 454000, China

    Ling Ling Yan, Guo Xiang Zhang, Hong Xin Cai, Liang Chen & Guo Hua Cao

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  1. Ling Ling Yan
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  3. Hong Xin Cai
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Correspondence to Hong Xin Cai.

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Yan, L.L., Zhang, G.X., Cai, H.X. et al. Synthesis of a high-quality Al-doped CdS/Si nanoheterojunction array and characterization of its electrical and electroluminescence properties. Appl. Phys. A 125, 408 (2019). https://doi.org/10.1007/s00339-019-2701-y

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