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Electrical and optical properties of lanthanum oxide-based films prepared by electron beam evaporation

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Abstract

Lanthanum oxide-based films were deposited on n-Si and quartz substrates using e-beam evaporation method. The XRD patterns demonstrated mixed structure consisting of La2O3 and La(OH)3 phases (referred as La2O3–OH). Optical and electrical properties of La2O3–OH films, as well as the effects of the annealing and storage conditions on these properties are described here. It is observed that conductance–voltage characteristics of Al/La2O3–OH/n-Si devices along with current rectification show negative differential conductance as a result of water molecule redox reaction on the film surface.

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Acknowledgements

The authors gratefully acknowledge support for this work by Armenian National Science and Education fund grant program, ANSEF (Grant No. 3913).

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Authors and Affiliations

  1. Institute for Physical Research of NAS of Armenia, 0203, Ashtarak-2, Aragatsotn, Armenia

    Arsen Igityan, Natella Aghamalyan, Silva Petrosyan, Irina Gambaryan, Georgi Badalyan, Ruben Hovsepyan & Yevgenia Kafadaryan

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  1. Arsen Igityan
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  2. Natella Aghamalyan
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  3. Silva Petrosyan
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  4. Irina Gambaryan
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  7. Yevgenia Kafadaryan
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Correspondence to Yevgenia Kafadaryan.

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Igityan, A., Aghamalyan, N., Petrosyan, S. et al. Electrical and optical properties of lanthanum oxide-based films prepared by electron beam evaporation. Appl. Phys. A 123, 448 (2017). https://doi.org/10.1007/s00339-017-1057-4

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